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CNKI学位论文(2)
知网期刊论文(8)
在“
Elsevier电子期刊
”中,
命中:
12
条,耗时:小于0.01 秒
在所有数据库中总计命中:
10
条
1.
Understanding and optimizing the floating body retention in FDSOI
UTBOX
作者:
M. Aoulaiche
b
;
1
;
marc.aoulaiche.ext@imec.be" class="auth_mail" title="E-mail the corresponding author
;
E. Simoen
a
;
C. Caillat
b
;
L. Witters
a
;
K.K. Bourdelle
c
;
B.-Y. Nguyen
d
;
J. Martino
e
;
C. Claeys
a
;
P. Fazan
b
;
M. Jurczak
a
关键词:
1TDRAM
;
Floating body
;
FDSOI
;
Retention
;
UTBOX
;
Generation lifetime
刊名:Solid State Electronics
出版年:2016
2.
Low-frequency noise assessment in advanced
UTBOX
SOI nMOSFETs with different gate dielectrics
作者:
S.D. dos Santos
a
;
B. Cretu
b
;
d
;
bogdan.cretu@ensicaen.fr" class="auth_mail
;
V. Strobel
b
;
d
;
J.-M. Routoure
c
;
d
;
R. Carin
c
;
d
;
J.A. Martino
a
;
M. Aoulaiche
e
;
M. Jurczak
e
;
E. Simoen
e
;
C. Claeys
e
;
f
关键词:
UTBOX
;
High-k dielectric
;
Flicker noise
;
Low frequency noise spectroscopy
;
Traps in Si film
刊名:Solid-State Electronics
出版年:July 2014
3.
Advantages of different source/drain engineering on scaled
UTBOX
FDSOI nMOSFETs at high temperature operation
作者:
Talitha Nicoletti
;
Sara Dereste dos Santos
;
Jo茫o Antonio Martino
;
Marc Aoulaiche
;
Anabela Veloso
;
Malgorzata Jurczak
;
Eddy Simoen
;
Cor Claeys
关键词:
UTBOX
;
FDSOI
;
High temperature
;
Underlap devices
;
Channel length scaling
刊名:Solid-State Electronics
出版年:January, 2014
4.
Improved retention times in
UTBOX
nMOSFETs for 1T-DRAM applications
作者:
K.R.A. Sasaki
a
;
katia.sasaki@gmail.com" class="auth_mail
;
T. Nicoletti
a
;
L.M. Almeida
a
;
S.D. dos Santos
a
;
A. Nissimoff
a
;
M. Aoulaiche
b
;
E. Simoen
b
;
C. Claeys
b
;
c
;
J.A. Martino
a
关键词:
UTBOX
;
BJT
;
1T-DRAM
;
Retention time
;
GIDL
;
Pulsed back gate bias
刊名:Solid-State Electronics
出版年:July 2014
5.
Optimizing the front and back biases for the best sense margin and retention time in
UTBOX
FBRAM
作者:
Luciano Mendes Almeida
;
K谩tia Regina Akemi Sasaki
;
Christian Caillat
;
Marc Aoulaiche
;
Nadine Collaert
;
Malgorzata Jurczak
;
Eddy Simoen
;
Cor Claeys
;
Jo茫o Antonio Martino
关键词:
UTBOX
;
SOI
;
BJT
;
FBRAM
;
Retention time
;
Current sense margin
刊名:Solid-State Electronics
出版年:December, 2013
6.
Parasitic bipolar impact in 32 nm undoped channel Ultra-Thin BOX (
UTBOX
) and biased Ground Plane FDSOI high-k/metal gate technology
作者:
C. Fenouillet-Beranger
a
;
b
;
claire.fenouillet-beranger@st.com
;
P. Perreau
a
;
b
;
P. Boulenc
b
;
L. Tosti
a
;
S. Barnola
a
;
F. Andrieu
a
;
O. Weber
a
;
R. Beneyton
b
;
C. Perrot
b
;
C. de Buttet
a
;
b
;
F. Abbate
b
;
Y. Campidelli
b
;
L. Pinzelli
b
;
P. Gouraud
b
;
A. Margain
b
;
S. Peru
b
;
K.K. Bourdelle
c
;
B.Y. Nguyen
c
;
F. Boedt
c
;
T. Poiroux
a
;
O. Faynot
a
;
T. Skotnicki
b
;
F. Boeuf
b
关键词:
FDSOI
;
Metal gate
;
Parasitic bipolar
;
UTBOX
;
Back bias
刊名:Solid-State Electronics
出版年:2012
7.
Study of substrate orientations impact on Ultra Thin Buried Oxide (
UTBOX
) FDSOI High-K Metal gate technology performances
作者:
Imed Ben Akkez
;
Claire Fenouillet-Beranger
;
Antoine Cros
;
Pierre Perreau
;
S茅batien Haendler
;
Olivier Weber
;
Fran莽ois Andrieu
;
D. Pellissier-Tanon
;
F. Abbate
;
C. Richard
;
R. Beneyton
;
P. Gouraud
;
A. Margain
;
C. Borowiak
;
E. Gourvest
;
K.K. Bourdelle
;
B.Y. Nguyen
;
T. Poiroux
;
Thomas Skotnicki
;
Olivier Faynot
;
et al.
关键词:
Ultra Thin Buried Oxide FDSOI
;
Rotated/non-rotated substrate
;
Low temperature
;
Low filed mobility
刊名:Solid-State Electronics
出版年:December, 2013
8.
Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology
作者:
C. Fenouillet-Beranger
;
P. Perreau
;
T. Benoist
;
C. Richier
;
S. Haendler
;
J. Pradelle
;
J. Bustos
;
P. Brun
;
L. Tosti
;
O. Weber
;
F. Andrieu
;
B. Orl
o ;
D. Pellissier-Tanon
;
F. Abbate
;
C. Richard
;
R. Beneyton
;
M. Gregoire
;
J. Ducote
;
P. Gouraud
;
A. Margain
;
et al.
关键词:
SOI
;
Fully-depleted
;
UTBOX
;
Back bias
;
ESD
;
Hybrid process
刊名:Solid-State Electronics
出版年:2013
9.
Reliability of ultra-thin buried oxides for multi-V
T
FDSOI technology
作者:
G. Besnard
a
;
b
;
c
;
guillaume.besnard@soitec.com" class="auth_mail
;
X. Garros
b
;
P. Nguyen
a
;
F. Andrieu
b
;
P. Reynaud
a
;
W. Van Den Daele
a
;
K.K. Bourdelle
a
;
W. Schwarzenbach
a
;
A. Toffoli
b
;
R. Kies
b
;
D. Delprat
a
;
G. Reimbold
b
;
S. Cristoloveanu
c
关键词:
Reliability
;
Fully depleted SOI
;
Ultra-thin buried oxide
;
Dynamic threshold voltage
;
Back-bias
刊名:Solid-State Electronics
出版年:July 2014
10.
On the extension of ET-FDSOI roadmap for 22 nm node and beyond
作者:
C. Sampedro
;
F. G谩miz
;
A. Godoy
关键词:
Multi-Subband Ensemble Monte Carlo
;
ETSOI
;
FDSOI
;
Ultra Thin BOX
;
BOX engineering
刊名:Solid-State Electronics
出版年:December, 2013
1
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