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CNKI学位论文(35)
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在“
Elsevier电子期刊
”中,
命中:
69
条,耗时:小于0.01 秒
在所有数据库中总计命中:
40
条
1.
Unintentional
gallium
incorporation
in InGaN layers during epitaxial growth
作者:
Kun Zhou
a
;
zhoukun2011@sinano.ac.cn
;
Huaijin Ren
a
;
Masao Ikeda
b
;
Jianping Liu
b
;
Yi Ma
a
;
Songxin Gao
a
;
Chun Tang
a
;
Deyao Li
b
;
Liquan Zhang
b
;
Hui Yang
b
关键词:
Unintentional
incorporation
;
Metalorganic vapor phase epitaxy
;
InGaN
;
Growth rate
;
Surface morphology
刊名:Superlattices and Microstructures
出版年:2017
2.
High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals
作者:
E. Senthil Kumar
a
;
F. Mohammadbeigi
a
;
L.A. Boatner
b
;
S.P. Watkins
a
;
simonw@sfu.ca" class="auth_mail" title="E-mail the corresponding author
关键词:
Zinc oxide
;
Photoluminescence
;
Electrical transport
;
Dopants
;
Sn
刊名:Journal of Luminescence
出版年:2016
3.
The double burden of neoliberalism? Noncommunicable disease policies and the global political economy of risk
作者:
Sara Glasgow
a
;
1
;
sglasgow@ncmich.edu" class="auth_mail" title="E-mail the corresponding author
;
Ted Schrecker
b
;
Theodore.schrecker@durham.ac.uk" class="auth_mail" title="E-mail the corresponding author
刊名:Health & Place
出版年:2016
4.
Origins of
unintentional
incorporation
of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions
作者:
Jeomoh Kim
;
Zachary Lochner
;
Mi-Hee Ji
;
Suk Choi
;
Hee Jin Kim
;
Jin Soo Kim
;
Russell D. Dupuis
;
Alec M. Fischer
;
Reid Juday
;
Yu Huang
;
Ti Li
;
Jingyi Y. Huang
;
Fern
;
o A. Ponce
;
Jae-Hyun Ryou
关键词:
A1. Characterization
;
A1. Growth models
;
A3. Metalorganic chemical vapor deposition
;
B1. Nitrides
;
B2. Semiconducting III&ndash
;
V materials
刊名:Journal of Crystal Growth
出版年:15 February, 2014
5.
Origins of
unintentional
incorporation
of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating
作者:
Suk Choi
;
Hee Jin Kim
;
Zachary Lochner
;
Jeomoh Kim
;
Russell D. Dupuis
;
Alec M. Fischer
;
Reid Juday
;
Yu Huang
;
Ti Li
;
Jingyi Y. Huang
;
Fern
;
o A. Ponce
;
Jae-Hyun Ryou
关键词:
A3. Metalorganic chemical vapor deposition
;
B2. Semiconducting III&ndash
;
V materials
刊名:Journal of Crystal Growth
出版年:15 February, 2014
6.
Unintentional
Ga
incorporation
in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors
作者:
Masanobu Hiroki
;
Yasuhiro Oda
;
Noriyuki Watanabe
;
Narihiko Maeda
;
Haruki Yokoyama
;
Kazuhide Kumakura
;
Hideki Yamamoto
关键词:
A1. Semiconducting III&ndash
;
V materials
;
A2. Metalorganic vapor phase epitaxy
;
B1. Nitrides
;
B2. Semiconducting indium compounds
刊名:Journal of Crystal Growth
出版年:2013
7.
On the zinc nitride properties and the
unintentional
incorporation
of oxygen
作者:
C. Garcí
;
a Nú
;
ñ
;
ez
;
carlos.garcia@uam.es
;
J.L. Pau
;
M.J. Herná
;
ndez
;
M. Cervera
;
E. Ruiz
;
J. Piqueras
关键词:
Zinc nitride
;
Radio-frequency magnetron sputtering
;
Rutherford backscattering spectroscopy
;
X-ray diffraction
;
Hall effect measurements
;
Oxygen
;
Contamination
刊名:Thin Solid Films
出版年:2012
8.
Development of epitaxial growth technology for Ge
1?
x
Sn
x
alloy and study of its properties for Ge nanoelectronics
作者:
Osamu Nakatsuka
;
nakatuka@alice.xtal.nagoya-u.ac.jp
;
Yosuke Shimura
1
;
Wakana Takeuchi
;
Noriyuki Taoka
;
Shigeaki Zaima
关键词:
Germanium
;
Tin
;
Epitaxial growth
;
Strain
;
Energy bandgap
;
Defect
刊名:Solid-State Electronics
出版年:2013
9.
Influences of
unintentional
ly doped carbon on magnetic properties in Mn–N co-doped ZnO
作者:
Kongping Wu
a
;
Shulin Gu
;
a
;
slgu@nju.edu.cn
;
Kun Tang
a
;
Shunming Zhu
a
;
Jiandong Ye
a
;
Rong Zhang
a
;
Youdou Zheng
a
关键词:
Zinc oxide
;
Metal-organic chemical vapor deposition
;
Unintentional
ly doped carbon
;
Impurity
;
Diluted magnetic semiconductor
刊名:Thin Solid Films
出版年:2011
10.
Bi
incorporation
in GaAs(100)-2¡Á1 and 4¡Á3 reconstructions investigated by RHEED and STM
作者:
F. Bastiman
a
;
f.bastiman@sheffield.ac.uk
;
A.G. Cullis
a
;
J.P.R. David
a
;
S.J. Sweeney
b
关键词:
A1. Crystal Morphology
;
A1. Scanning tunnelling microscopy
;
A3. Molecular beam epitaxy
;
B1. Bismuth compounds
刊名:Journal of Crystal Growth
出版年:2012
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