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在“Elsevier电子期刊”中，命中：9,642条，耗时：0.1519266 秒

在所有数据库中总计命中：93,140条

1.Semiconducting properties of cold sintered V₂O₅ ceramics and Co-sintered V₂O₅-PEDOT:PSS composites

作者：Jing Guo^a ; ^{jug34@psu.edu} ; Hanzheng Guo^a ; Damoon Sohrabi Baba Heidary^a ; Shuichi Funahashi^a ; ^b ; Clive A. Randall^a ; ^car4@psu.edu

关键词：Cold sintering process ; Oxide semiconductor ; V2O5 ; V2O5-PEDOT ; PSS composite ; Metal-insulator transition

刊名：Journal of the European Ceramic Society

出版年：2017

2.Doping of semiconductors by molecular monolayers: monolayer formation, dopant diffusion and applications

作者：Liang Ye^a ; ^b ; Michel P. de Jong^b ; Tibor Kudernac^a ; Wilfred G. van der Wiel^b ; Jurriaan Huskens^a ; ^{j.huskens@utwente.nl" class="auth_mail" title="E-mail the corresponding author}

关键词：Monolayer doping ; Silicon ; Germanium ; Group III-V semiconductors ; Dopant ; Transistor

刊名：Materials Science in Semiconductor Processing

出版年：2017

3.Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment

作者：D. Gregu&scaron ; ová ; ^a ; ^{Dagmar.Gregusova@savba.sk} ; ^{elekgreg@savba.sk} ; F. Gucmann^a ; R. Kú ; dela^a ; M. Miču&scaron ; í ; k^b ; R. Stoklas^a ; L. Vá ; lik^a ; J. Gregu&scaron ; ^c ; M. Blaho^a ; P. Kordo&scaron ; ^d

关键词：Surface treatment ; III&ndash ; V Semiconductors ; Gallium arsenide ; Heterostructure field effect transistors ; Transistor characteristics ; Trap state density

刊名：Applied Surface Science

出版年：2017

4.N-type doping strategies for InGaAs

作者：Henry Aldridge Jr^a ; ; Aaron G. Lind^a ; Cory C. Bomberger^b ; Yevgeniy Puzyrev^c ; Joshua M.O. Zide^b ; Sokrates T. Pantelides^c ; Mark E. Law^a ; Kevin S. Jones^a

关键词：III&ndash ; V semiconductors ; Semiconductor processing ; Thermal processing ; Dopant activation ; Dopant diffusion

刊名：Materials Science in Semiconductor Processing

出版年：2017

5.BiVO₄ nanowires decorated with CdS nanoparticles as Z-scheme photocatalyst with enhanced H₂ generation

作者：Fan Qi Zhou^a ; Jin Chen Fan^a ; ^{Jinchen_Jin@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Qun Jie Xu^a ; ^{xuqunjie@shiep.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Yu Lin Min^a ; ^b ; ^{ahaqmylin@126.com" class="auth_mail" title="E-mail the corresponding author}

关键词：BiVO4 nanowires ; CdS ; Z-scheme ; Photocatalytic H2 generation ; Visible light

刊名：Applied Catalysis B: Environmental

出版年：2017

6.Investigation on the simultaneous removal of fluoride, ammonia nitrogen and phosphate from semiconductor wastewater using chemical precipitation

作者：Haiming Huang ; Jiahui Liu ; Peng Zhang ; Dingding Zhang ; Faming Gao ; ^{fmgao@ysu.edu.cn" class="auth_mail" title="E-mail the corresponding author}

关键词：Ammonia nitrogen ; Phosphate ; Fluoride ; Struvite ; Semiconductor wastewater

刊名：Chemical Engineering Journal

出版年：2017

7.Magnetic and electrical properties of Heusler compounds Ru₂Cr_1−xX_xSi (X = V, Ti)

作者：Masahiko Hiroi^a ; ^{hiroi@sci.kagoshima-u.ac.jp} ; Hiroaki Sano^a ; Tomoya Tazoko^a ; Iduru Shigeta^a ; Masakazu Ito^a ; Keiichi Koyama^a ; Hirotaka Manaka^b ; Norio Terada^b ; Muneaki Fujii^c ; Akihiro Kondo^d ; Koichi Kindo^d

关键词：Heusler compounds ; Metal semiconductor crossover ; Spin glasses ; Antiferromagnetism ; Magnetoresistance

刊名：Journal of Alloys and Compounds

出版年：2017

8.Compositing effects of CuBi₂O₄ on visible-light responsive photocatalysts

作者：Masami Nishikawa ; ^{nishikawa@vos.nagaokaut.ac.jp" class="auth_mail" title="E-mail the corresponding author} ; Soichiro Yuto ; Takahiro Hasegawa ; Wataru Shiroishi ; Hou Honghao ; Yukihiro Nakabayashi ; Yoshio Nosaka ; Nobuo Saito

关键词：Photocatalyst ; Composite ; z-scheme ; CuBi2O4 ; WO3 ; BiVO4

刊名：Materials Science in Semiconductor Processing

出版年：2017

9.Half-metallicity and magnetism of the full-Heusler compounds KYX₂ (Y=Ti, V, and Cr; X=C, N, and O)

作者：M. Dehghanzadeh ; F. Ahmadian ; ^{farzad.ahmadian@gmail.com} ; ^{ahmadian@iaush.ac.ir}

关键词：A. Half-metals ; A. Heusler alloys ; D. Magnetic properties ; D. Electronic properties

刊名：Solid State Communications

出版年：2017

10.Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

作者：Erman Erdoğan^a ; ^{e.erdogan@alparslan.edu.tr} ; Mutlu Kundakç ; ı^b

关键词：Current-voltage characteristics ; Ag Schottky contact ; InGaN ; Room temperature ; Schottky barrier diode ; Thermionic vacuum arc (TVA)

刊名：Physica B: Condensed Matter

出版年：2017

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