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在“Elsevier电子期刊”中，命中：2,257条，耗时：0.1049541 秒

在所有数据库中总计命中：79条

1.Electrical characterization of Au/n-GaN metal–semiconductor and Au/SiO₂/n-GaN metal–insulator–semiconductor structures

作者：V. Rajagopal Reddy^a ; ^{reddy_vrg@rediffmail.com" rel="nofollow} ; M. Siva Pratap Reddy^a ; B. Prasanna Lakshmi^a ; A. Ashok Kumar^b

关键词：Electrical characteristics ; Metal&#x2013 ; semiconductor ; Metal&#x2013 ; insulator&#x2013 ; semiconductor ; Interface state density ; DLTS measurements ; n-Type GaN

刊名：Journal of Alloys and Compounds

出版年：2011

2.Electrical characterization of Au/n-GaN metal–semiconductor and Au/SiO₂/n-GaN metal–insulator–semiconductor structures

作者：V. Rajagopal Reddy^a ; ^{reddy_vrg@rediffmail.com"" rel=""nofollow} ; M. Siva Pratap Reddy^a ; B. Prasanna Lakshmi^a ; A. Ashok Kumar^b

关键词：Electrical characteristics ; Metal&#x2013 ; semiconductor ; Metal&#x2013 ; insulator&#x2013 ; semiconductor ; Interface state density ; DLTS measurements ; n-Type GaN

刊名：Journal of Alloys and Compounds

出版年：2011

3.Matrix-assisted pulsed-laser evaporated polymer films in all-organic field-effect transistors and metal–insulator–semiconductor diodes

作者：N.B. Ukah^a ; ^{nbu5zf@mail.mizzou.edu"" rel=""nofollow} ; D. Adil^a ; J. Granstrom^b ; R.K. Gupta^c ; K. Ghosh^c ; S. Guha^a ; ^{guhas@missouri.edu"" rel=""nofollow}

关键词：Matrix-assisted pulsed-laser evaporation ; Organic field-effect-transistors ; Metal&#x2013 ; insulator&#x2013 ; semiconductor diodes ; Polymers ; Dielectrics

刊名：Organic Electronics

出版年：2011

4.Atomic Vapor Depositions of Ti–Ta–O thin films for Metal–Insulator–Metal applications

作者：M. Lukosius^a ; ^{lukosius@ihp-microelectronics.com} ; C. Baristiran Kaynak^a ; Ch. Wenger^a ; G. Ruhl^b ; S. Rushworth^c ; P. Baumann^d

关键词：Titanium tantalum oxide ; Metal&#x2013 ; Insulator&#x2013 ; Metal capacitors ; Atomic Vapor Deposition ; High-k dielectrics ; X-ray diffraction

刊名：Thin Solid Films

出版年：2011

5.Hydrogen sensing performances of Pt/i-ZnO/GaN metal–insulator–semiconductor diodes

作者：Hsin-Ying Lee^a ; Hung-Lin Huang^b ; Ching-Ting Lee^c ; ^{ctlee@ee.ncku.edu.tw"" rel=""nofollow} [Author vitae]

关键词：Hydrogen gas sensors ; GaN ; Intrinsic ZnO layer ; Metal&#x2013 ; insulator&#x2013 ; semiconductor structure ; Vapor cooling condensation system

刊名：Sensors and Actuators B: Chemical

出版年：2011

6.Double metal–insulator peaks and effect of Sm³⁺ substitution on magnetic and transport properties of hole-doped La_0.85Ag_0.15MnO₃

作者：N. Ibrahim^a ; A.K. Yahya^a ; ^{ahmad191@salam.uitm.edu.my"" rel=""nofollow} ; S.S. Rajput^b ; S. Keshri^b ; M.K. Talari^a

关键词：Ferromagnetic&#x2013 ; paramagnetic transition ; Griffith's phase ; Magnetoresistance ; Manganite ; Metal&#x2013 ; insulator transition ; Sm³⁺ substitution

刊名：Journal of Magnetism and Magnetic Materials

出版年：2011

7.Metal–insulator–metal capacitors with MOCVD grown Ce–Al–O as a dielectric

作者：M. Lukosius^a ; ^{lukosius@ihp-microelectronics.com"" rel=""nofollow} ; C. Baristiran-Kaynak^a ; A. Abrutis^b ; M. Skapas^b ; V. Kubilius^b ; A. Zauner^c ; G. Ruhl^d ; Ch. Wenger^a

关键词：MIM ; Ce&#x2013 ; Al&#x2013O ; MOCVD ; Dielectric

刊名：Microelectronic Engineering

出版年：2011

8.Preparation and characterization of TaAlO_x high-κ dielectric for metal–insulator–metal capacitor applications

作者：M.K. Hota ; C. Mahata ; M.K. Bera ; S. Mallik ; C.K. Sarkar ; S. Varma ; C.K. Maiti

关键词：High-κ ; dielectrics ; Metal&#x2013 ; insulator&#x2013 ; metal structure ; Radio-frequency co-sputtering ; Tantalum aluminum oxide ; X-ray photoelectron spectroscopy ; Capacitance I

刊名：Thin Solid Films

出版年：2010

9.Structurally-driven metal–insulator transition in Ca₂Ru_1−xCr_xO₄ (0≤x<0.14): A single crystal X-ray diffraction study

作者：T.F. Qi^a ; ^b ; ^tqi2@uky.edu ; M. Ge^a ; ^c ; O.B. Korneta^a ; ^b ; S. Parkin^a ; ^d ; L.E. De Long^a ; ^b ; G. Cao^a ; ^b

关键词：Single crystal X-ray diffraction ; Structurally-driven ; Metal&#x2013 ; insulator transition ; Structure distortion

刊名：Journal of Solid State Chemistry

出版年：2011

10.Fabrication of Metal–Insulator–Metal Junction with Metallic Conductive Langmuir–Blodgett Films

作者：Kengo Mochizuki^a ; Hitoshi Ohnuki^a ; ^{ohnuki@kaiyodai.ac.jp" rel="nofollow} ; Keiichi Ikegami^b ; Tatsuro Imakubo^c ; Mitsuru Izumi^a

关键词：Langmuir&#x2013 ; Blodgett Films ; self-assembled monolayer ; TTF derivatives ; metallic conductivity ; tunneling

刊名：Physics Procedia

出版年：2011

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