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Springer电子图书(2)
CNKI会议论文(1)
CNKI学位论文(569)
知网期刊论文(478)
在“
Elsevier电子期刊
”中,
命中:
86
条,耗时:0.0239555 秒
在所有数据库中总计命中:
1,050
条
1.
Design and investigation of variability aware sense amplifier for low power, high speed
SRAM
作者:
B.S. Reniwal
a
;
P. Bhatia
b
;
S.K. Vishvakarma
a
;
skvishvakarma@iiti.ac.in
关键词:
Current latch sense amplifier
;
Offset
;
SRAM
;
Inter die variations
;
Intra die variations
刊名:Microelectronics Journal
出版年:2017
2.
An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged
SRAM
devices: High energy alpha backside irradiation
作者:
Saqib Ali Khan
a
;
Saqibkhan@hanyang.ac.kr
;
Chulseung Lim
a
;
Geunyong Bak
a
;
Sanghyeon Baeg
a
;
Soonyoung Lee
b
关键词:
Single event effect (SEE)
;
Alpha particle
;
Soft errors
;
GEANT4
;
14
;
nm
FinFET
刊名:Microelectronics Reliability
出版年:2017
3.
A 20
nm
robust single-ended boost-less 7T FinFET sub-threshold
SRAM
cell under process-voltage-temperature variations
作者:
C.B. Kushwah
a
;
S.K. Vishvakarma
a
;
skvishvakarma@iiti.ac.in" class="auth_mail" title="E-mail the corresponding author
;
D. Dwivedi
b
关键词:
Boost-less
;
FinFET
;
Process&ndash
;
voltage&ndash
;
temperature
;
SRAM
;
Sub-threshold
;
Ultra-low power
刊名:Microelectronics Journal
出版年:2016
4.
An improved energy efficient
SRAM
cell for access over a wide frequency range
作者:
Debasish Nayak
;
nayak.debasish84@gmail.com" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Debiprasad Priyabrata Acharya
d_p_acharya@rediffmail.com" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Kamalakanta Mahapatra
kkm@nitrkl.ac.in" class="auth_mail" title="E-mail the corresponding author
Author Vitae
关键词:
SRAM
cell
;
Low leakage circuit
;
Short-circuit current
;
Read S
NM
;
Retention S
NM
刊名:Solid State Electronics
出版年:2016
5.
Power efficient
SRAM
design with integrated bit line charge pump
作者:
Xu Wang
a
;
b
;
wangxu0737@163.com" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Yuanzhi Zhang
c
;
yzzhang@siu.edu" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Chao Lu
c
;
chaolu@siu.edu" class="auth_mail" title="E-mail the corresponding author
Author Vitae
;
Zhigang Mao
a
;
maozhigang@ic.sjtu.edu.cn" class="auth_mail" title="E-mail the corresponding author
Author Vitae
关键词:
SRAM
;
Low power
;
Charge pump
;
Bit line
刊名:AEU - International Journal of Electronics and Communications
出版年:2016
6.
Improving the performance of
SRAM
s using asymmetric junctionless accumulation mode (JAM) FinFETs
作者:
Gaurav Saini
a
;
b
;
gauravsaini@nitkkr.ac.in
;
Sudhanshu Choudhary
a
;
b
;
sudhanshu@nitkkr.ac.in
关键词:
JAM
;
Dual-k spacer
;
SRAM
;
SCEs
刊名:Microelectronics Journal
出版年:2016
7.
CMOS Buffer Design Approach for Low Power and Lower Delay
SRAM
Design
作者:
p.p. Mariyamol
a
;
N. Aswathy
b
;
mariyakunchi@gmail.com" class="auth_mail" title="E-mail the corresponding author
关键词:
SRAM
peripheral
;
CMOS tapper buffer
;
CMOS inverter
;
Tapering factor
;
Leakage power
刊名:Procedia Technology
出版年:2016
8.
A 0.35 V, 375 kHz, 5.43 µW, 40
nm
, 128 kb, symmetrical 10T subthreshold
SRAM
with tri-state bit-line
作者:
Shang-Lin Wu
a
;
anleyou@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
Chien-Yu Lu
a
;
Ming-Hsien Tu
b
;
Huan-Shun Huang
b
;
Kuen-Di Lee
b
;
Yung-Shin Kao
b
;
Ching-Te Chuang
a
;
chingte.chuang@gmail.com" class="auth_mail" title="E-mail the corresponding author
关键词:
Low power
;
Subthreshold
SRAM
;
Write-assist
;
10T cell
刊名:Microelectronics Journal
出版年:2016
9.
A novel design of low power and high read stability Ternary
SRAM
(T-SRAM), memory based on the modified Gate Diffusion Input (m-GDI) method in nanotechnology
作者:
Ebrahim Abiri
abiri@sutech.ac.ir
;
Abdolreza Darabi
;
darabi.aa@gmail.com
关键词:
Gate Diffusion Input (GDI) Technique
;
Carbon Nano Tube (CNT) Field Effect Transistor (CNTFET)
;
Multiple-Valued Logic (MVL)
;
Ternary logic
;
Process and temperature variations
;
Static Noise Margin (S
NM
)
;
Power-Delay Product (PDP)
刊名:Microelectronics Journal
出版年:2016
10.
ASAP7: A 7-
nm
finFET predictive process design kit
作者:
Lawrence T. Clark
a
;
Lawrence.clark@asu.edu" class="auth_mail" title="E-mail the corresponding author
;
Vinay Vashishtha
a
;
Lucian Shifren
b
;
Aditya Gujja
a
;
Saurabh Sinha
c
;
Brian Cline
c
;
Chandarasekaran Ramamurthy
a
;
Greg Yeric
c
关键词:
Predictive process design kit
;
7-
nm
technology
;
Process scaling
;
Extreme ultraviolet lithography
;
Self-aligned multiple patterning
;
Design rules
刊名:Microelectronics Journal
出版年:2016
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