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在“
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命中:
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条,耗时:小于0.01 秒
在所有数据库中总计命中:
975
条
1.
Fabrication and characterization of hydrothermally grown MgZnO nanorod films for
Schottky
diode applications
作者:
Shaivalini Singh
;
G. R. Dillip
;
Sumit Vyas
;
Md. Roqibul Hasan…
刊名:Microsystem Technologies
出版年:2017
2.
Barrier modification of Au/n-GaAs
Schottky
structure by organic interlayer
作者:
A. Bobby
;
N. Shiwakoti
;
P. S. Gupta
;
B. K. Antony
关键词:
Au/n
;
GaAs
;
Schottky
contacts
;
Interface modification
;
Organic interlayer
;
73.30. + y
;
73.40.
c ;
73.40.Qv
;
73.50.Gr
;
68.08.
p
刊名:Indian Journal of Physics
出版年:2016
3.
Electrical Characteristics of
Schottky
Contacts
to
p
-Type (001) GaP: Understanding of Carrier Transport Mechanism
作者:
Sungjoo Song
;
Dae-Hyun Kim
;
Daesung Kang
;
Tae-Yeon Seong
关键词:
carrier transport mechanism
;
AlGaInP
;
GaP
;
Schottky
barrier height
;
TFE model
刊名:Journal of Electronic Materials
出版年:2016
4.
Growth and Characterization of Single Crystalline InN Grown on GaN by RF Sputtering for Robust
Schottky
Contacts
作者:
Vache Harotoonian
;
Jerry M. Woodall
关键词:
InN
;
III
N ;
sputtering
;
Schottky
contact
;
atomic force microscopy
x ;
ray diffraction
刊名:Journal of Electronic Materials
出版年:2016
5.
Transport mechanisms and interface properties of W/p-InP
Schottky
diode at room temperature
作者:
D. Sri Silpa
;
P. Sreehith
;
V. Rajagopal Reddy
;
V. Janardhanam
关键词:p ;
InP
;
Schottky
contacts
;
Electrical properties
;
Current conduction mechanisms
;
Interface state density
刊名:Indian Journal of Physics
出版年:2016
6.
On the ohmicity of
Schottky
contacts
作者:
A. V. Sachenko
;
A. E. Belyaev
;
R. V. Konakova
刊名:Semiconductors
出版年:2016
7.
Effects of Annealing on Electrical Characteristics and Current Transport Mechanisms of the Y/p-GaN
Schottky
Diode
作者:
V. Rajagopal Reddy
;
B. Asha
;
Chel-Jong Choi
刊名:Journal of Electronic Materials
出版年:2016
8.
Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN X
Schottky
Metal Structures for High-Power Applications
作者:
Ting-En Hsieh
;
Yueh-Chin Lin
;
Chung-Ming Chu…
刊名:Journal of Electronic Materials
出版年:2016
9.
Investigation of nanostructured Pd–Ag/n-ZnO thin film based
Schottky
junction for methane sensing
作者:
S. Roy
;
S. Das
;
C. K. Sarkar
刊名:International Nano Letters
出版年:2016
10.
Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method
作者:
Ying Wang
;
Zaixing Yang
;
Xiaofeng Wu
;
Ning Han
;
Hanyu Liu…
关键词:
GaAs
;
Chemical vapor deposition
;
Two
;
source
;
Contact printing
;
Nanowire parallel arrays
;
Schottky
solar cells
刊名:Nanoscale Research Letters
出版年:2016
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