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Wiley电子期刊(20)
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在“
SpringerLink电子期刊
”中,
命中:
348
条,耗时:小于0.01 秒
在所有数据库中总计命中:
2,295
条
1.
A Study of the Parasitic Properties of the
Schottky
Barrier
Diode
作者:
Tianhao Ren
;
Yong Zhang
;
Shuang Liu…
关键词:
Modeling technology
;
Three
;
configuration parameter extraction method
;
Parasitic properties
;
Schottky
barrier
diode
刊名:Journal of Infrared, Millimeter, and Terahertz Waves
出版年:2017
2.
Electrical and Dielectric Properties of a
n
-Si
Schottky
Barrier
Diode
with Bismuth Titanate Interlayer: Effect of Temperature
作者:
M. Yıldırım
;
C. Şahin
;
Ş. Altındal
;
P. Durmuş
关键词:
MFS
Schottky
barrier
diode
s
;
bismuth titanate
;
electrical and dielectric properties
;
temperature effect
刊名:Journal of Electronic Materials
出版年:2017
3.
Fabrication and characterization of hydrothermally grown MgZnO nanorod films for
Schottky
diode
applications
作者:
Shaivalini Singh
;
G. R. Dillip
;
Sumit Vyas
;
Md. Roqibul Hasan…
刊名:Microsystem Technologies
出版年:2017
4.
Fabrication of p-type ZnTe NW/In
Schottky
diode
s for high-speed photodetectors
作者:
Yuan Chang
;
Di Wu
;
Tingting Xu
;
Zhifeng Shi…
刊名:Journal of Materials Science: Materials in Electronics
出版年:2017
5.
Junction characteristics of ITO/PANI-ZnS/Ag and ITO/PANI-CdS/Ag
Schottky
diode
s: a comparative study
作者:
S. K. Dey
;
S. Baglari
;
D. Sarkar
关键词:
Polyaniline
;
Zinc sulphide
;
Cadmium sulphide
;
Nanocomposite
;
Schottky
diode
;
73.61. Ph
;
73.61. Ga
;
78.67. Sc
刊名:Indian Journal of Physics
出版年:2016
6.
Fabrication of a 1.7-kV
Schottky
barrier
diode
with improved forward current-voltage characteristics
作者:
In Ho Kang
;
Moon Kyong Na
;
Ogyun Seok…
关键词:
4H
;
SiC
;
Schottky
barrier
diode
;
Thermal annealing
;
Forward I
;
V improvement
刊名:Journal of the Korean Physical Society
出版年:2016
7.
Transport mechanisms and interface properties of W/p-InP
Schottky
diode
at room temperature
作者:
D. Sri Silpa
;
P. Sreehith
;
V. Rajagopal Reddy
;
V. Janardhanam
关键词:p ;
InP
;
Schottky
contacts
;
Electrical properties
;
Current conduction mechanisms
;
Interface state density
刊名:Indian Journal of Physics
出版年:2016
8.
On the laser lift-off of lightly doped micrometer-thick
n
-GaN films from substrates via the absorption of IR radiation in sapphire
作者:
V. V. Voronenkov
;
M. V. Virko
;
V. S. Kogotkov
;
A. A. Leonidov…
刊名:Semiconductors
出版年:2017
9.
Effect of oxygen plasma treatment on the electrical characteristics of Pt/n-type Si
Schottky
diode
s
作者:
V. Janardhanam
;
I. Jyothi
;
Shim-Hoon Yuk…
关键词:
Oxygen plasma
n ;
type Si
;
Schottky
barrier
;
Series resistance
;
Interface states
刊名:Journal of the Korean Physical Society
出版年:2016
10.
Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/Al
2
O
3
/GaN MIS
Diode
作者:
M. Siva Pratap Reddy
;
Peddathimula Puneetha…
关键词:
GaN MIS
diode
s
;
tetramethylammonium hydroxide
;
reverse leakage current
;
transport mechanisms
;
Poole–Frenkel emission
;
Schottky
emission
刊名:Journal of Electronic Materials
出版年:2016
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