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SpringerLink电子期刊(26)

在“SpringerLink电子期刊”中，命中：26条，耗时：0.0539751 秒

在所有数据库中总计命中：63条

1. Transport mechanisms and interface properties of W/p-InP Schottky diode at room temperature

作者： D. Sri Silpa ; P. Sreehith ; V. Rajagopal Reddy ; V. Janardhanam

关键词：p ; InP ; Schottky contacts ; Electrical properties ; Current conduction mechanisms ; Interface state density

刊名：Indian Journal of Physics

出版年：2016

2. Effects of Annealing on Electrical Characteristics and Current Transport Mechanisms of the Y/p-GaN Schottky Diode

作者： V. Rajagopal Reddy ; B. Asha ; Chel-Jong Choi

刊名：Journal of Electronic Materials

出版年：2016

3. Rapid thermal annealing effects on the electrical, structural and morphological properties of Yb/p-type InP Schottky Structure

作者： V. Rajagopal Reddy ; D. Sri Silpa ; V. Janardhanam…

关键词：Yb Schottky contacts ; electrical and structural properties ; rapid thermal annealing ; depth profiles ; X ; ray photoemission spectroscopy studies

刊名：Electronic Materials Letters

出版年：2015

4. Double Gaussian Distribution of Barrier Heights, Interface States, and Current Transport Mechanisms in Au/Bi0.5Na0.5TiO3-BaTiO3/

作者： V. Rajagopal Reddy ; V. Manjunath ; V. Janardhanam…

关键词：Bi0.5Na0.5TiO3 ; BaTiO3 insulating layer ; temperature ; dependent electrical properties ; density of interface states ; double Gaussian distribution ; barrier inhomogeneity

刊名：Journal of Electronic Materials

出版年：2015

5. Electrical and interfacial properties of Au/n-InP Schottky contacts with nickel phthalocyanine (NiPc) interlayer

作者： V. Rajagopal Reddy

关键词：n ; InP ; NiPc organic material ; Barrier heights ; Interface state density ; Relaxation times ; 73.40.Lq ; 73.40.Qv ; 73.40.Ns ; 73.30.+y

刊名：Indian Journal of Physics

出版年：2015

6. Annealing effects on the electrical, structural and morphological properties of Ti/p-GaN/Ni/Au Schottky diode

作者： G. Nagaraju ; L. Dasaradha Rao ; V. Rajagopal Reddy

刊名：Applied Physics A: Materials Science & Processing

出版年：2015

7. Electrical Properties and Current Transport Mechanisms of the Au/n-GaN Schottky Structure with Solution- Processed High-k BaTiO3 Interlayer

作者：V. Rajagopal Reddy (1) (2)
V. Manjunath (1)
V. Janardhanam (2)
Yeon-Ho Kil (2)
Chel-Jong Choi (2)

关键词：BaTiO3 insulating layer ; n ; type GaN ; MIS structure ; electrical properties ; interface state density ; conduction mechanisms

刊名：Journal of Electronic Materials

出版年：2014

8. Influence of annealing effects on the electrical and microstructural properties of Se Schottky contacts on n-type GaN

作者：V. Rajagopal Reddy (1) (2)
V. Janardhanam (2)
Min-Sung Kang (2)
Chel-Jong Choi (2)

刊名：Journal of Materials Science: Materials in Electronics

出版年：2014

9. Influence of Annealing on Electrical Properties of an Organic Thin Layer-Based n-Type InP Schottky Barrier Diode

作者：V. Rajagopal Reddy (1)
A. Umapathi (1)
S. Sankar Naik (1)

关键词：Electrical properties ; Au/PMMA/n ; InP Schottky diode ; series resistance ; interface state density

刊名：Journal of Electronic Materials

出版年：2013

10. Electrical properties and conduction mechanism of an organic-modified Au/NiPc/n-InP Schottky barrier diode

作者：V. Rajagopal Reddy (1)

刊名：Applied Physics A: Materials Science & Processing

出版年：2014

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