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Springer电子图书(9)
NATURE电子期刊(2)
ACS电子期刊(13)
SpringerLink电子期刊(77)
Elsevier电子期刊(298)
在“
SpringerLink电子期刊
”中,
命中:
77
条,耗时:小于0.01 秒
在所有数据库中总计命中:
399
条
1.
Gate and drain SEU sensitivity of sub-20-nm
FinFET
- and Junctionless FinFET-based 6T-SRAM circuits by 3D TCAD simulation
作者:
S. Nilamani
;
V. N. Ramakrishnan
关键词:
Trigate
;
FinFET
;
Junctionless
FinFET
;
6T
;
SRAM
;
Heavy ion
;
SEU radiation
刊名:Journal of Computational Electronics
出版年:2017
2.
Work Function Tuning and Doping Optimization of 22-nm HKMG Raised SiGe/SiC Source–Drain
FinFET
s
作者:
F. A. Md Rezali
;
M. A. S. Abd Rasid
;
N. A. F. Othman…
关键词:
Halo doping
;
source/drain doping
;
substrate doping
;
work function
;
Taguchi method
;
Pareto ANOVA
刊名:Journal of Electronic Materials
出版年:2017
3.
Asymmetric dual-k spacer trigate
FinFET
for enhanced analog/RF performance
作者:
Gaurav Saini
;
Sudhanshu Choudhary
关键词:
Analog FOM
;
Asymmetric dual
;
k spacer
;
Short channel effects
;
Transconductance
;
Trigate
FinFET
刊名:Journal of Computational Electronics
出版年:2016
4.
A two-dimensional (2D) analytical surface potential and subthreshold current model for the underlap dual-material double-gate (DMDG)
FinFET
作者:
Vadthiya Narendar
;
Saurabh Rai
;
Siddharth Tiwari
关键词:
Drain
;
induced barrier lowering (DIBL)
;
Dual
;
material double
;
gate (DMDG)
;
FinFET
;
Short
;
channel effects (SCEs)
;
Subthreshold current
;
Underlap
刊名:Journal of Computational Electronics
出版年:2016
5.
FinFET
Design Considerations Based on Schmitt Trigger with Slew Rate and Gain–Bandwidth Product Analysis
作者:
Pawan Sharma
;
Saurabh Khandelwal
;
Shyam Akashe
关键词:
Schmitt trigger
;
Slew rate
;
Independent gate
;
Delay
;
Gain–bandwidth product
刊名:Wireless Personal Communications
出版年:2016
6.
Key characterization factors of accurate power modeling for
FinFET
circuits
作者:
KaiSheng Ma (1) (2)
XiaoXin Cui (1)
Kai Liao (1)
Nan Liao (1)
Di Wu (1)
DunShan Yu (1)
1. Institution of Microelectronics
;
Peking University
;
Beijing
;
100871
;
China
2. Department of Computer Science and Engineering
;
The Pennsylvania State University
;
University Park
;
PA
;
16801
;
USA
关键词:
FinFET
;
power modeling
;
leakage power
;
internal power
;
input slew
;
output load
;
FinFET
;
鍔熻€楁ā鍨?/li> 娉勯湶鍔熻€?/li> 鍐呴儴鍔熻€?/li> 杈撳叆淇″彿姝枩
;
璐熻浇鐢靛
;
022403
刊名:SCIENCE CHINA Information Sciences
出版年:2015
7.
Novel 14-nm Scallop-Shaped
FinFET
s (S-FinFETs) on Bulk-Si Substrate
作者:
Weijia Xu
;
Huaxiang Yin
;
Xiaolong Ma
;
Peizhen Hong
;
Miao Xu…
关键词:
FinFET
;
Field
;
effect transistors
;
Si nanowire
;
Drain
;
induced barrier lowering
;
Subthreshold swing
刊名:Nanoscale Research Letters
出版年:2015
8.
Performance projections for ballistic carbon nanotube
FinFET
at circuit level
作者:
Panpan Zhang
;
Chenguang Qiu
;
Zhiyong Zhang
;
Li Ding
;
Bingyan Chen…
刊名:Nano Research
出版年:2016
9.
Performance enhancement of
FINFET
and CNTFET at different node technologies
作者:
Raju Hajare
;
C. Lakshminarayana
;
G. H. Raghunandan…
刊名:Microsystem Technologies
出版年:2016
10.
Ultralow-power high-speed flip-flop based on multimode
FinFET
s
作者:
Kai Liao
;
Xiaoxin Cui
;
Nan Liao
;
Tian Wang…
刊名:SCIENCE CHINA Information Sciences
出版年:2016
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