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内部出版物
Wiley电子期刊(4)
NATURE电子期刊(1)
ACS电子期刊(2)
SpringerLink电子期刊(11)
Elsevier电子期刊(41)
在“
SpringerLink电子期刊
”中,
命中:
11
条,耗时:小于0.01 秒
在所有数据库中总计命中:
59
条
1.
Simulation investigation of dual-wavelength tuning of light emitting diodes with single QW structure
作者:
Hao Sun
;
Huiqing Sun
;
Mengxia Gao
;
Xuna Li
;
Zhiyou Guo…
关键词:
Wavelength tuning
;
Dual
;
wavelength
;
Light
;
emitting diodes
;
Phosphor
;
free LED
刊名:Optical and Quantum Electronics
出版年:2016
2.
Investigation of whether uniform carrier distribution in quantum wells can lead to higher performance in InGaN light-emitting diodes
作者:
Liwen Cheng
;
Shudong Wu
;
Haitao Chen
;
Changquan Xia…
关键词:
Gallium nitride (GaN)
;
Light
;
emitting diodes (LEDs)
;
Multi quantum wells (M
QWs
)
;
Uniform carrier distribution
;
Numerical simulation
刊名:Optical and Quantum Electronics
出版年:2016
3.
Hopping transport in the space-charge region of p-n structures with InGaN/GaN
QWs
as a source of excess 1/f noise and efficiency droop in LEDs
作者:
N. I. Bochkareva
;
A. M. Ivanov
;
A. V. Klochkov
;
V. S. Kogotkov…
刊名:Semiconductors
出版年:2015
4.
Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN
QWs
as the main mechanism of the efficiency droop in LEDs at high injection levels
作者:
N. I. Bochkareva
;
Yu. T. Rebane
;
Yu. G. Shreter
刊名:Semiconductors
出版年:2015
5.
Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency
作者:
A. F. Tsatsulnikov
;
W. V. Lundin
;
A. V. Sakharov
;
E. E. Zavarin…
刊名:Semiconductors
出版年:2015
6.
Correlation between luminescence and defects in nonpolar and semipolar InGaN/GaN quantum wells on planar and patterned sapphire substrates
作者:
Seunga Lee (1)
Geunho Yoo (1)
Jongjin Jang (1)
Youngjong Won (1)
Okhyun Nam (1)
关键词:
III
;
nitride semiconductor
;
nonpolar/semipolar quantum wells
;
defects
;
luminescence
刊名:Electronic Materials Letters
出版年:2014
7.
Efficiency droop in GaN LEDs at high current densities: Tunneling leakage currents and incomplete lateral carrier localization in InGaN/GaN quantum wells
作者:
N. I. Bochkareva (1)
Y. T. Rebane (1)
Y. G. Shreter (1)
刊名:Semiconductors
出版年:2014
8.
Correlation between the efficiency droop and the blueshift of the electroluminescence in InGaN/GaN multiple-quantum-well blue light-emitting diodes
作者:
Joosun Yun (1)
Hye-Seung Yeom (1)
Jong-In Shim (1)
Dong-Soo Shin (2)
关键词:
Light
;
emitting diode
;
InGaN
;
Saturation
;
Droop
;
Blueshift
刊名:Journal of the Korean Physical Society
出版年:2013
9.
Study of dual-blue light-emitting diodes with asymmetric AlGaN graded barriers
作者:
Qi-rong Yan (1)
Yong Zhang (2)
Jun-zheng Li (3)
刊名:Optoelectronics Letters
出版年:2014
10.
Rapid photoelectric diagnostics of LEDs based on InGaN/GaN heterostructures
作者:
M. V. Baranovskiy (1)
G. F. Glinskii (1)
刊名:Technical Physics Letters
出版年:2013
1
2
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