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SpringerLink电子期刊(30)

在“SpringerLink电子期刊”中，命中：30条，耗时：0.0409807 秒

在所有数据库中总计命中：95条

1. A 1G-cell floating-gate NOR flash memory in 65 nm technology with 100 ns random access time

作者：LiFang Liu (1)
Dong Wu (1) (2)
XueMei Liu (1)
ZongLiang Huo (3)
Ming Liu (3)
LiYang Pan (1) (2)

1. Institute of Microelectronics ; University of Tsinghua ; Beijing ; 100084 ; China
2. Tsinghua National Laboratory for Information Science and Technology ; Beijing ; 100084 ; China
3. Laboratory of Nano-Fabrication and Novel Devices Integrated Technology ; Institute of Microelectronics ; Chinese Academy of Sciences ; Beijing ; 100029 ; China

关键词：NOR flash memory ; giga ; level ; 65 nm technology ; array efficiency ; high speed ; NOR闂瓨 ; giga绾?/li> 65nm宸ヨ壓 ; 闃靛垪鏁堢巼 ; 楂橀€?/li> 042405

刊名：SCIENCE CHINA Information Sciences

出版年：2015

2. NAND flash memory system based on the Harvard buffer architecture for multimedia applications

作者： Cheong Ghil Kim ; Kuinam J. Kim ; JungHoon Lee

关键词：Flash memory ; XIP (execute in place) ; Buffer system ; Harvard vs von neumann architecture ; Multimedia applications

刊名：Multimedia Tools and Applications

出版年：2015

3. Applications of Oxide Channel Ferroelectric-Gate Thin Film Transistors

刊名：Topics in Applied Physics

出版年：2016

4. A 65-nm 1-Gb NOR floating-gate flash memory with less than 50-ns access time

作者： Yu Wang ; Zongliang Huo ; Huamin Cao ; Ting Li ; Jing Liu…

关键词：NOR floating ; gate flash memory ; 65 ; nm process ; Giga bit size ; Access time ; Circuit design

刊名：Chinese Science Bulletin

出版年：2014

5. A write buffer design based on stable and area-saving embedded SRAM for flash applications

作者： HuaMin Cao ; ZongLiang Huo ; Yu Wang ; Ting Li…

关键词：write buffer ; embedded SRAM ; flash ; 65 nm technology ; 2 kb ; 128 Mb

刊名：SCIENCE CHINA Technological Sciences

出版年：2015

6. Total ionizing radiation effects of 2-T SONOS for 130 nm/4 Mb NOR flash memory technology

作者：FengYing Qiao (1)
LiYang Pan (1) (2)
Xiao Yu (1)
HaoZhi Ma (1)
Dong Wu (1) (2)
Jun Xu (1) (2)

关键词：silicon ; oxide ; nitride ; oxide ; silicon ; SONOS ; total ionizing dose ; TID ; flash memory ; radiation effects ; 130 nm

刊名：SCIENCE CHINA Information Sciences

出版年：2014

7. A simple wear leveling algorithm for NOR type solid storage device

作者：Sanjat Kumar Panigrahi (1)
Chandan Maity (1)
Ashutosh Gupta (1)

关键词：Wear leveling ; SSD ; NOR ; NAND ; Endurance ; Reliability ; Flash

刊名：CSI Transactions on ICT

出版年：2014

8. A hybrid memory built by SSD and DRAM to support in-memory Big Data analytics

作者：Zhiguang Chen (1) (2)
Yutong Lu (1) (2)
Nong Xiao (1) (2)
Fang Liu (1) (2)

关键词：Hybrid memory ; SSD ; Big Data ; In ; memory computing ; Prefetch ; Pattern recognition

刊名：Knowledge and Information Systems

出版年：2014

9. MixSL: An Efficient Transaction Recovery Model in Flash-Based DBMS

作者：Yulei Fan (21)
Xiaofeng Meng (21)

关键词：Flash Memory ; Recovery ; Database ; Shadow Page

刊名：Lecture Notes in Computer Science

出版年：2013

10. Polycrystalline silicon multi-functional memory (MFM) with a recessed channel structure

作者：Jin-Kwon Park (1)
Won-Ju Cho (1)

关键词：1T ; DRAM ; Recessed channel ; SOI ; Capacitorless ; Sensing margin ; Poly ; silicon ; ONO ; Nonvolatile memory

刊名：Journal of the Korean Physical Society

出版年：2013

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