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在“
SpringerLink电子期刊
”中,
命中:
119
条,耗时:小于0.01 秒
在所有数据库中总计命中:
475
条
1.
Demonstration of Logic Operations in High-Performance
RRAM
Crossbar Array Fabricated by Atomic Layer Deposition Technique
作者:
Runze Han
;
Peng Huang
;
Yudi Zhao
;
Zhe Chen
;
Lifeng Liu…
关键词:
RRAM
;
Crossbar
;
Atomic layer deposition (ALD)
;
Logic operation
刊名:Nanoscale Research Letters
出版年:2017
2.
Technological Exploration of
RRAM
Crossbar Array for Matrix-Vector Multiplication
作者:
Lixue Xia
;
Peng Gu
;
Boxun Li
;
Tianqi Tang…
关键词:
resistive switching random access memory (
RRAM
)
;
machine learning
;
electronic design automation
;
matrix
;
vector multiplication
;
non
;
ideal factor
刊名:Journal of Computer Science and Technology
出版年:2016
3.
Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta
2
O
5
/HfO
2-
x
/Hf Stack
作者:
Haili Ma
;
Jie Feng
;
Hangbing Lv
;
Tian Gao
;
Xiaoxin Xu…
关键词:
RRAM
;
Crossbar
;
Leakage current issue
;
Self
;
rectifying
刊名:Nanoscale Research Letters
出版年:2017
4.
Effect of carrier screening on ZnO-based resistive switching memory devices
作者:
Yihui Sun
;
Xiaoqin Yan
;
Xin Zheng
;
Yong Li
;
Yichong Liu
;
Yanwei Shen…
关键词:
resistive switch
;
carrier screening effect
;
carrier concentration
;
potential gradient
;
annealing
刊名:Nano Research
出版年:2017
5.
Improvement of Bipolar Switching Properties of Gd:SiOx
RRAM
Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment
作者:
Kai-Huang Chen
;
Kuan-Chang Chang
;
Ting-Chang Chang…
关键词:
Nonvolatile memory
;
Gadolinium
;
Supercritical CO2
;
Resistive switching
;
Silicon oxide
刊名:Nanoscale Research Letters
出版年:2016
6.
Multiferroic YCrO3 thin films grown on glass substrate: Resistive switching characteristics
作者:
Jeongdae Seo
;
Yoonho Ahn
;
Jong Yeog Son
关键词:
multiferroic
;
YCrO3 thin film
;
RRAM
;
unipolar switching behavior
刊名:Electronic Materials Letters
出版年:2016
7.
Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film
RRAM
devices
作者:
Kai-Huang Chen
;
Kuan-Chang Chang
;
Ting-Chang Chang
;
Tsung-Ming Tsai…
刊名:Applied Physics A: Materials Science & Processing
出版年:2016
8.
Implementing delay insensitive oscillatory neural networks using CMOS and emerging technology
作者:
Thomas C. Jackson
;
Rongye Shi…
关键词:
Neuromorphic computing
;
Oscillatory neural network
;
RRAM
crossbar synapses
刊名:Analog Integrated Circuits and Signal Processing
出版年:2016
9.
Interfacial Electrode-Driven Enhancement of the Switching Parameters of a Copper Oxide-Based Resistive Random-Access Memory Device
作者:
L. D. Varma Sangani
;
Ch. Ravi Kumar…
关键词:
RRAM
;
resistive switching
;
copper oxide
;
interfacial electrode
;
low reset current
;
low leakage current
刊名:Journal of Electronic Materials
出版年:2016
10.
Characteristics of resistive switching in ZnO/SiO
x
multi-layers for transparent nonvolatile memory devices
作者:
Kyongmin Kim
;
Eunkyeom Kim
;
Youngill Kim…
关键词:
ZnO
;
Multilayer
;
Resistive switching
;
Nonvolatile memory
;
RRAM
刊名:Journal of the Korean Physical Society
出版年:2016
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