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在“
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”中,
命中:
536
条,耗时:小于0.01 秒
在所有数据库中总计命中:
3,387
条
1.
Electrical and Dielectric Properties of a
n
-Si
Schottky
Barrier
Diode with Bismuth Titanate Interlayer: Effect of Temperature
作者:
M. Yıldırım
;
C. Şahin
;
Ş. Altındal
;
P. Durmuş
关键词:
MFS
Schottky
barrier
diodes
;
bismuth titanate
;
electrical and dielectric properties
;
temperature effect
刊名:Journal of Electronic Materials
出版年:2017
2.
A Study of the Parasitic Properties of the
Schottky
Barrier
Diode
作者:
Tianhao Ren
;
Yong Zhang
;
Shuang Liu…
关键词:
Modeling technology
;
Three
;
configuration parameter extraction method
;
Parasitic properties
;
Schottky
barrier
diode
刊名:Journal of Infrared, Millimeter, and Terahertz Waves
出版年:2017
3.
Analysis of electrostatic doped
Schottky
barrier
carbon nanotube FET for low power applications
作者:
Amandeep Singh
;
Mamta Khosla
;
Balwinder Raj
刊名:Journal of Materials Science: Materials in Electronics
出版年:2017
4.
Fabrication and characterization of hydrothermally grown MgZnO nanorod films for
Schottky
diode applications
作者:
Shaivalini Singh
;
G. R. Dillip
;
Sumit Vyas
;
Md. Roqibul Hasan…
刊名:Microsystem Technologies
出版年:2017
5.
Design and Performance of (Au,Yb)/ZnS/InSe/C Heterojunctions as Plasmon Resonators, Photodetectors and Microwave Cavities
作者:
Najla M. Khusayfan
;
Hazem K. Khanfar
关键词:
Plasmon
;
ZnS
;
InSe
;
terahertz
;
gigahertz
;
high responsivity
刊名:Journal of Electronic Materials
出版年:2017
6.
Fabrication of a 1.7-kV
Schottky
barrier
diode with improved forward current-voltage characteristics
作者:
In Ho Kang
;
Moon Kyong Na
;
Ogyun Seok…
关键词:
4H
;
SiC
;
Schottky
barrier
diode
;
Thermal annealing
;
Forward I
;
V improvement
刊名:Journal of the Korean Physical Society
出版年:2016
7.
Circuit Compatible Model for Electrostatic Doped
Schottky
Barrier
CNTFET
作者:
Amandeep Singh
;
Mamta Khosla
;
Balwinder Raj
关键词:
Carbon nanotube (CNT)
;
compact modeling
;
Schottky
barrier
CNTFET
;
electrostatic doped
;
quantum capacitance
刊名:Journal of Electronic Materials
出版年:2016
8.
The influence of electrode contact on the anodization of Pt/sol–gel derived SrTiO
3
thin film/Al capacitor
作者:
Manwen Yao
;
Fei Li
;
Qiuxia Li
;
Kaien Xu…
刊名:Journal of Materials Science: Materials in Electronics
出版年:2017
9.
Preparation of Au nanoparticle-decorated ZnO/NiO heterostructure via nonsolvent method for high-performance photocatalysis
作者:
Jun Wu
;
Chengzhi Luo
;
Delong Li
;
Qiang Fu
;
Chunxu Pan
刊名:Journal of Materials Science
出版年:2017
10.
Analysis of inhomogeneous device parameters using current–voltage characteristics of identically prepared lateral
Schottky
structures
作者:
N. Tuğluoğlu
;
H. Koralay
;
K. B. Akgül
;
Ş. Çavdar
关键词:
Schottky
structure
;
Current–voltage
;
Barrier
height
;
Ideality factor
;
Series resistance
;
Interface state density
;
73.40.Sx
;
85.30.Hi
;
85.30.Kk
刊名:Indian Journal of Physics
出版年:2016
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