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在“
SpringerLink电子期刊
”中,
命中:
201
条,耗时:小于0.01 秒
在所有数据库中总计命中:
743
条
1.
Increase the
threshold
voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment
作者:
E. V. Erofeev
;
I. V. Fedin
;
I. V. Kutkov
;
Yu. N. Yuryev
刊名:Semiconductors
出版年:2017
2.
A scheme to improve PCE of differential-drive CMOS rectifier for low RF input power
作者:
Yuan Chang
;
Shailesh Singh Chouhan…
关键词:
CMOS rectifier
;
Power conversion efficiency
;
Differential
;
drive rectifier
;
Forward body biasing
;
Low RF input power
刊名:Analog Integrated Circuits and Signal Processing
出版年:2017
3.
The bistability phenomenon in single and coupled oscillators based on VO
2
switches
作者:
M. A. Belyaev
;
V. V. Putrolaynen
;
A. A. Velichko
刊名:Technical Physics Letters
出版年:2017
4.
Analysis of the DNN-
k
WTA Network Model with Drifts in the Offset
Voltages
of
Threshold
Logic Units
关键词:
Winner
;
take
;
all
;
Dual neural network
;
Threshold
logic unit
;
Convergence
刊名:Lecture Notes in Computer Science
出版年:2016
5.
Effect of doping concentration and annealing temperature on
threshold
voltages
of bipolar resistive switching in Mn-doped BiFeO3 films
作者:
Jinming Luo
;
Haining Zhang
;
Jianping Wen…
关键词:
Threshold
voltages
;
Resistive switching
;
Bismuth ferrite
;
Thin films
;
Sol–gel
刊名:Journal of Sol-Gel Science and Technology
出版年:2016
6.
An Analytical
Threshold
Voltage Model of Fully Depleted (FD) Recessed-Source/Drain (Re-S/D) SOI MOSFETs with Back-Gate Control
作者:
Gopi Krishna Saramekala
;
Pramod Kumar Tiwari
关键词:
Fully depleted (FD)
;
recessed
;
source/drain (Re
;
S/D)
;
SOI MOSFET
;
back
;
gate control
;
buried oxide (BOX)
;
threshold
voltage controllability
刊名:Journal of Electronic Materials
出版年:2016
7.
A novel process variation immune dopingless zero sub-
threshold
slope and zero impact ionization FET (DL-Z
作者:
Sangeeta Singh
;
P. N. Kondekar
关键词:
Zero sub
;
threshold
slope
;
Statistical random dopant fluctuations (RDFs)
;
Hot electron degradation
;
Gate controlled hysteresis
刊名:Journal of Computational Electronics
出版年:2016
8.
Exploiting Cross-Layer Hotness Identification to Improve Flash Memory System Performance
关键词:
NAND flash memory
;
Endurance
;
Raw bit error rate
;
Threshold
voltage
;
Cross
;
layer
刊名:Lecture Notes in Computer Science
出版年:2016
9.
Influence of Processing Conditions and Material Properties on Electrohydrodynamic Direct Patterning of a Polymer Solution
作者:
Shin Jang
;
Yeongjun Kim
;
Je Hoon Oh
关键词:
Electrohydrodynamic patterning
;
polyethylene oxide (PEO) solution
;
threshold
voltage
;
molecular weight
;
electrospinning
刊名:Journal of Electronic Materials
出版年:2016
10.
Ballistic transfer of spin momentum in multiferroic tunnel junction
作者:
G. D. Demin
;
A. F. Popkov
;
A. K. Zvezdin…
关键词:
multiferroic tunnel junction
;
spin torque
;
phase diagram
;
threshold
voltage
刊名:Bulletin of the Lebedev Physics Institute
出版年:2016
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