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CNKI学位论文(414)
CNKI期刊论文0611(1)
知网期刊论文(144)
在“
SpringerLink电子期刊
”中,
命中:
30
条,耗时:0.1459391 秒
在所有数据库中总计命中:
559
条
1.
Effects of electrode on
resistance
switching properties of ZnMn
2
O
4
films deposited by magnetron sputtering
作者:
Hua Wang 王华
;
Zhida Li
;
Jiwen Xu
;
Yupei Zhang…
关键词:
Key wordsZnMn2O4
;
resistance
switching behavior
;
electrode
;
magnetron sputtering
刊名:Journal of Wuhan University of Technology-Mater. Sci. Ed.
出版年:2016
2.
Transparent bipolar resistive switching memory on a flexible substrate with indium-zinc-oxide electrodes
作者:
Seung-Won Yeom
;
Hyeon Jun Ha
;
Junsu Park…
关键词:
Oxygen vacancy
;
ReRAM
;
Resistive switching
;
TiO2
;
Poole
;
Frenkel emission
;
Flexible electronics
;
Transparent electronics
刊名:Journal of the Korean Physical Society
出版年:2016
3.
Electrical properties of a TiN/Ti
x
Al
1 –
x
O
y
/TiN memristor device manufactured by magnetron sputtering
作者:
A. N. Bobylev
;
S. Yu. Udovichenko
刊名:Russian Microelectronics
出版年:2016
4.
Investigation of LRS dependence on the retention of
HRS
in CBRAM
作者:
Xiaoxin Xu (1)
Hangbing Lv (1)
Hongtao Liu (1)
Qing Luo (1)
Tiancheng Gong (1)
Ming Wang (1)
Guoming Wang (1)
Meiyun Zhang (1)
Yang Li (1)
Qi Liu (1)
Shibing Long (1)
Ming Liu (1)
1. Laboratory of Nano-Fabrication and Novel Devices Integrated Technology
;
Institute of Microelectronics
;
Chinese Academy of Sciences
;
#3 Beitucheng West Road
;
Chaoyang District
;
Beijing
;
100029
;
China
关键词:
Resistive random access memory (RRAM)
;
High
resistance
state
(
HRS
)
;
Retention
;
Quantum point contact (QPC) model
刊名:Nanoscale Research Letters
出版年:2015
5.
Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices
作者:
Hee-Dong Kim
;
Min Ju Yun
;
Sungho Kim
刊名:Journal of the Korean Physical Society
出版年:2016
6.
Resistance
switching properties of Ag/ZnMn2O4/p-Si fabricated by magnetron sputtering for
resistance
random access memory
作者:
Hua Wang
;
Zhida Li
;
Jiwen Xu
;
Yupei Zhang…
关键词:
ZnMn2O4
;
resistance
switching
;
properties
;
RRAM
;
magnetron sputtering
刊名:Journal of Wuhan University of Technology--Materials Science Edition
出版年:2015
7.
Interface modulation and resistive switching evolution in Pt/NiO x /Al2O3/n+–Si structure
作者:
Haifa Zhai
;
Xiaojie Liu
;
Yanqiang Cao
;
Jizhou Kong
;
Xu Qian…
刊名:Applied Physics A: Materials Science & Processing
出版年:2015
8.
High
performance of graphene oxide-doped silicon oxide-based
resistance
random access memory
作者:
Rui Zhang (10)
Kuan-Chang Chang (11)
Ting-Chang Chang (12) (13)
Tsung-Ming Tsai (11)
Kai-Huang Chen (14)
Jen-Chung Lou (10)
Jung-Hui Chen (15)
Tai-Fa Young (16)
Chih-Cheng Shih (11)
Ya-Liang Yang (11) (16)
Yin-Chih Pan (11)
Tian-Jian Chu (11)
Syuan-Yong Huang (11)
Chih-Hung Pan (11)
Yu-Ting Su (12)
Yong-En Syu (12)
Simon M Sze (17)
关键词:
High
performance
;
Graphene oxide
;
RRAM
;
Hopping conduction
刊名:Nanoscale Research Letters
出版年:2013
9.
Bipolar resistive switching behaviours in ZnMn2O4 film deposited on p+-Si substrate by chemical solution deposition
作者:
JIWEN XU
;
ZUPEI YANG
;
YUPEI ZHANG
;
XIAOWEN ZHANG
;
HUA WANG
关键词:
ZnMn2O4
;
bipolar
;
resistive switching
;
chemical solution deposition
刊名:Bulletin of Materials Science
出版年:2014
10.
Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure
作者:
Siddheswar Maikap
;
Debanjan Jana
;
Mrinmoy Dutta
;
Amit Prakash
关键词:
RRAM
;
Self
;
compliance
;
Resistive switching
;
TaO x
;
Non
;
linearity
刊名:Nanoscale Research Letters
出版年:2014
1
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