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CNKI学位论文(49)
CNKI期刊论文0611(1)
知网期刊论文(314)
在“
SpringerLink电子期刊
”中,
命中:
3
条,耗时:小于0.01 秒
在所有数据库中总计命中:
364
条
1.
Investigation of Leakage Current Mechanisms in La
2
O
3
/SiO
2
/4H-SiC MOS Capacitors with Varied SiO
2
Thickness
作者:
Yucheng Wang
;
Renxu
Jia
;
Yanli Zhao
;
Chengzhan Li…
关键词:
La2O3
;
4H
;
SiC
x ;
ray photoelectron spectroscopy
;
current leakage mechanism
刊名:Journal of Electronic Materials
出版年:2016
2.
Reduction of deep level defects in unintentionally doped 4H-SiC homo-epilayers by ion implantation
作者:
Renxu
Jia
(1) rx
jia
@mail.xidian.edu.cn
Yuming Zhang (1) zhangym@xidian.edu.cn
Yimen Zhang (1)
关键词:
Key words 4H
;
SiC Homo
;
epilayers – deep level defects – carbon ion
;
implantation
刊名:Journal of Wuhan University of Technology--Materials Science Edition
出版年:2012
3.
Characterization of the heteroepitaxial growth of 3C-SiC on Si during low pressure chemical vapor deposition
作者:
Da Chen (1)
YuMing Zhang (1)
YiMen Zhang (1)
YueHu Wang (1)
RenXu
Jia
(1)
关键词:
3C
;
SiC
;
low pressure chemical vapor deposition
;
X
;
ray diffraction
;
atomic force microscopy
;
Fourier transform infrared spectroscopy
刊名:Chinese Science Bulletin
出版年:2010
1
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