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Springer电子图书(1)
CNKI学位论文(4)
知网期刊论文(22)
在“
SpringerLink电子期刊
”中,
命中:
20
条,耗时:小于0.01 秒
在所有数据库中总计命中:
27
条
1.
Effects of Elevated Source/Drain and Side Spacer Dielectric on the Drivability Optimization of Non-abrupt Ultra Shallow Junction
Gate
Underlap
DG MOSFETs
作者:
Kunal Singh
;
Sanjay Kumar
;
Ekta Goel
;
Balraj Singh…
关键词:
Elevated source/drain (ES/D)
;
ultra shallow junction (USJ)
;
straggle parameter
;
on/off current ratio
;
gate
underlap
刊名:Journal of Electronic Materials
出版年:2017
2.
Subthreshold Current and Swing Modeling of
Gate
Underlap
DG MOSFETs with a Source/Drain Lateral Gaussian Doping Profile
作者:
Kunal Singh
;
Sanjay Kumar
;
Ekta Goel
;
Balraj Singh…
关键词:
Ultra
;
shallow junction (USJ)
;
straggle parameter
;
subthreshold current
;
subthreshold swing
;
short
;
channel effects (SCEs)
;
gate
underlap
;
DG MOSFETs
刊名:Journal of Electronic Materials
出版年:2017
3.
Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors
作者:
Kanak Datta
;
Abir Shadman
;
Ehsanur Rahman…
关键词:
TMDC
;
MOSFET
;
sub
;
threshold swing
;
drain induced barrier lowering
;
NEGF
;
pH sensor
;
nanobiosensor
;
drift–diffusion
刊名:Journal of Electronic Materials
出版年:2017
4.
Underlap
channel silicon-on-insulator quantum dot floating-
gate
MOSFET for low-power memory applications
作者:
Chetan T. Dabhi
;
Ganesh C. Patil
关键词:
Floating
gate
;
Silicon
;
on
;
insulator
;
Static power dissipation
;
Capacitive coupling ratio
;
Underlap
;
Short
;
channel effects
刊名:Journal of Computational Electronics
出版年:2016
5.
A two-dimensional (2D) analytical surface potential and subthreshold current model for the
underlap
dual-material double-
gate
(DMDG) FinFET
作者:
Vadthiya Narendar
;
Saurabh Rai
;
Siddharth Tiwari
关键词:
Drain
;
induced barrier lowering (DIBL)
;
Dual
;
material double
;
gate
(DMDG)
;
FinFET
;
Short
;
channel effects (SCEs)
;
Subthreshold current
;
Underlap
刊名:Journal of Computational Electronics
出版年:2016
6.
Analytical Modeling of Potential Distribution and Threshold Voltage of
Gate
Underlap
DG MOSFETs with a Source/Drain Lateral Gaussian Doping Profile
作者:
Kunal Singh
;
Mirgender Kumar
;
Ekta Goel
;
Balraj Singh…
关键词:
DG MOSFETs
;
ultra
;
shallow junction (USJ)
;
straggle parameter
;
drain
;
induced barrier lowering (DIBL)
;
short
;
channel effects (SCEs)
;
gate
underlap
;
loss of switching speed
刊名:Journal of Electronic Materials
出版年:2016
7.
Asymmetric dual-k spacer tri
gate
FinFET for enhanced analog/RF performance
作者:
Gaurav Saini
;
Sudhanshu Choudhary
关键词:
Analog FOM
;
Asymmetric dual
;
k spacer
;
Short channel effects
;
Transconductance
;
Tri
gate
FinFET
刊名:Journal of Computational Electronics
出版年:2016
8.
Inter-modulation linearity investigation of an optimally designed and optimally biased LNA for wireless LAN
作者:
I. V. Singh
;
M. S. Alam
刊名:Radioelectronics and Communications Systems
出版年:2015
9.
Effect of
underlap
and soft error performance in 30 nm FinFET-based 6T-SRAM cells with simultaneous and independent driven
gate
s
作者:
V. N. Ramakrishnan (1)
R. Srinivasan (2)
关键词:
FinFET
;
Independent
gate
;
6T
;
SRAM
;
SEU
;
Soft error
;
TCAD
刊名:Journal of Computational Electronics
出版年:2013
10.
Accurate modeling of nanoscale
gate
underlap
SOI MOSFET and design of low noise amplifier for RF applications
作者:
I. V. Singh (19363)
M. S. Alam (19363)
G. A. Armstrong (29363)
刊名:Radioelectronics and Communications Systems
出版年:2013
1
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