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在“
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”中,
命中:
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Analytical subthreshold current and subthreshold swing models of short-channel dual-metal-gate (DMG) fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs
作者:
Gopi
Krishna
Saramekala (1)
Abirmoya
Santra
(1)
Mirge
nder Kumar (2)
Sarvesh
Dubey (3)
Satyabrata
Jit (2)
Pramod
Kumar
Tiwari
(1)
关键词:
Recessed
;
source/drain (Re
;
S/D)
;
Dual
;
metal
;
gate (DMG)
;
Fully
;
depleted silicon
;
on
;
insulator (FD
;
SOI) MOSFET
;
Subthreshold current and swing
刊名:Journal of Computational Electronics
出版年:2014
1
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作者(1)
按出版年细分(1)
2014年(1)
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