搜索页_MOSFETs

设为首页

收藏本站

网站地图 | English | 公务邮箱

About the library

Background
History
Leadership
Organization

Readers' Guide

Opening Hours
Collections
Help Via Email

Publications

Electronic Information Resources

常用资源

在“SpringerLink电子期刊”中，命中：411条，耗时：小于0.01 秒

在所有数据库中总计命中：2,792条

1. Modeling gate-all-around Si/SiGe MOSFETs and circuits for digital applications

作者： Subindu Kumar ; Amrita Kumari ; Mukul Kumar Das

关键词：Aspect ratio ; GAA ; MOSFETs ; Series resistance ; Strain

刊名：Journal of Computational Electronics

出版年：2017

2. Subthreshold Current and Swing Modeling of Gate Underlap DG MOSFETs with a Source/Drain Lateral Gaussian Doping Profile

作者： Kunal Singh ; Sanjay Kumar ; Ekta Goel ; Balraj Singh…

关键词：Ultra ; shallow junction (USJ) ; straggle parameter ; subthreshold current ; subthreshold swing ; short ; channel effects (SCEs) ; gate underlap ; DG MOSFETs

刊名：Journal of Electronic Materials

出版年：2017

3. Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors

作者： Kanak Datta ; Abir Shadman ; Ehsanur Rahman…

关键词：TMDC ; MOSFET ; sub ; threshold swing ; drain induced barrier lowering ; NEGF ; pH sensor ; nanobiosensor ; drift–diffusion

刊名：Journal of Electronic Materials

出版年：2017

4. Effects of Elevated Source/Drain and Side Spacer Dielectric on the Drivability Optimization of Non-abrupt Ultra Shallow Junction Gate Underlap DG MOSFETs

作者： Kunal Singh ; Sanjay Kumar ; Ekta Goel ; Balraj Singh…

关键词：Elevated source/drain (ES/D) ; ultra shallow junction (USJ) ; straggle parameter ; on/off current ratio ; gate underlap

刊名：Journal of Electronic Materials

出版年：2017

5. Body-driven log/antilog PVT compensated analog computational block

作者： Karama M. AL-Tamimi ; Kamal EL-Sanakary

关键词：Log/antilog ; PVT ; Multiplier ; Body ; driven ; Current ; mode

刊名：Analog Integrated Circuits and Signal Processing

出版年：2017

6. A new compact CMOS C-multiplier

作者： Munir Ahmad Al-Absi ; Eyas Saleh Al-Suhaibani…

关键词：Capacitance multiplier ; Translinear loop ; Low frequency filters ; Biomedical circuits ; Oscillators

刊名：Analog Integrated Circuits and Signal Processing

出版年：2017

7. Gate and drain SEU sensitivity of sub-20-nm FinFET- and Junctionless FinFET-based 6T-SRAM circuits by 3D TCAD simulation

作者： S. Nilamani ; V. N. Ramakrishnan

关键词：Trigate ; FinFET ; Junctionless FinFET ; 6T ; SRAM ; Heavy ion ; SEU radiation

刊名：Journal of Computational Electronics

出版年：2017

8. Analytical Modeling of Potential Distribution and Threshold Voltage of Gate Underlap DG MOSFETs with a Source/Drain Lateral Gaussian Doping Profile

作者： Kunal Singh ; Mirgender Kumar ; Ekta Goel ; Balraj Singh…

关键词：DG MOSFETs ; ultra ; shallow junction (USJ) ; straggle parameter ; drain ; induced barrier lowering (DIBL) ; short ; channel effects (SCEs) ; gate underlap ; loss of switching speed

刊名：Journal of Electronic Materials

出版年：2016

9. A simulation study of short channel effects with a QET model based on Fermi–Dirac statistics and nonparabolicity for high-mobility MOSFETs

作者： Shohiro Sho ; Shinji Odanaka ; Akira Hiroki

关键词：Quantum energy transport (QET) model ; Nonparabolic band effects ; Fermi–Dirac statistics ; Quantum confinement ; Short channel effects ; \(\hbox {In}_{0.53}\hbox {Ga}_{0.47}\) ; As

刊名：Journal of Computational Electronics

出版年：2016

10. An Analytical Threshold Voltage Model of Fully Depleted (FD) Recessed-Source/Drain (Re-S/D) SOI MOSFETs with Back-Gate Control

作者： Gopi Krishna Saramekala ; Pramod Kumar Tiwari

关键词：Fully depleted (FD) ; recessed ; source/drain (Re ; S/D) ; SOI MOSFET ; back ; gate control ; buried oxide (BOX) ; threshold voltage controllability

刊名：Journal of Electronic Materials

出版年：2016

按检索点细分(411)

题名(179)

关键词(61)

文摘(332)

按出版年细分(411)

2017年(7)

2016年(25)

2015年(28)

2014年(27)

2013年(26)

2012年(27)

2011年(5)

2010年(10)

2009年(6)

2008年(33)

2007年(22)

2006年(67)

2005年(16)

2004年(24)

2003年(41)

2002年(30)

2001年(6)

2000年(3)

2000年及以前(8)