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内部出版物
在“
SpringerLink电子期刊
”中,
命中:
75
条,耗时:小于0.01 秒
1.
Recrystallization of Ge thin film on SiO
2
substrates using a two-step annealing process
作者:
Sung Wook Kim
;
Jaejun Lee
;
Youn Ho Park
;
Jeong Min Park…
关键词:
germanium thin film
;
SiO2/Si
;
two
;
step growth
;
cyclic annealing
;
recrystallization
刊名:Electronic Materials Letters
出版年:2017
2.
Rapid flame synthesis of multilayer graphene on SiO2/Si substrate
作者:
Hongzhong Liu
;
Shuya Zhu
;
Weitao Jiang
刊名:Journal of Materials Science: Materials in Electronics
出版年:2016
3.
Layer-by-Layer Analysis of the Thickness Distribution of Silicon Dioxide in the Structure SiO2/Si(111) by Inelastic Electron Scattering Cross-Section Spectroscopy
作者:
A. S. Parshin
;
S. A. Kushchenkov
;
O. P. Pchelyakov
;
Yu. L. Mikhlin
刊名:Semiconductors
出版年:2016
4.
Fast growth of graphene on SiO2/Si substrates by atmospheric pressure chemical vapor deposition with floating metal catalysts
作者:
Na Liu
;
Jia Zhang
;
Yunfeng Qiu
;
Jie Yang
;
PingAn Hu
刊名:SCIENCE CHINA Chemistry
出版年:2016
5.
SiC Nitridation by NH3 Annealing and Its Effects in MOS Capacitors with Deposited SiO2 Films
作者:
E. Pitthan
;
A.L. Gobbi
;
H.I. Boudinov
;
F.C. Stedile
关键词:
SiO2/SiC interface
;
ammonia annealing
;
nuclear reaction analyses
;
isotopes
;
MOS capacitors
;
sputtered SiO2 films
刊名:Journal of Electronic Materials
出版年:2015
6.
Effects of Thermal Annealing on the Thermoelectric and Optical Properties of SiO2/SiO2+Cu Nanolayer Thin Films
作者:
S. Budak
;
M. Baker
;
J. Lassiter
;
C. Smith
;
C. Muntele…
关键词:
Thermoelectric properties
;
multi
;
nanolayers
;
thermal annealing
;
optical properties
刊名:Journal of Electronic Materials
出版年:2015
7.
Structural, electrical and optical properties of a Li-doped ZnO thin film fabricated on a Pt(111)/Ti/SiO2/Si(100) substrate
作者:
C. M. Raghavan
;
J. W. Kim
;
K. W. Jang
;
S. S. Kim
关键词:
Li
;
doped ZnO thin film
;
Chemical solution deposition
;
Electrical properties
;
Ferroelectric properties
刊名:Journal of the Korean Physical Society
出版年:2015
8.
Hysteresis Phenomena in mis Structures Based on Graded-Gap MBE Hgcdte with a Two-Layer Plasma-Chemical Insulator SIO2/SI3N4
作者:
А. V. Voitsekhovskii
;
S. N. Nesmelov
;
S. M. Dzyadukh
关键词:
the MIS structure
;
HgCdTe
;
molecular beam epitaxy
;
a graded
;
gap layer
;
the capacitance
;
voltage characteristics
;
hysteresis of the capacitance
;
voltage characteristic
;
a transition layer on the insulator–semiconductor interface
刊名:Russian Physics Journal
出版年:2015
9.
A Unique Approach to Generate Self-Aligned SiO2/Ge/SiO2/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step
作者:
Wei-Ting Lai
;
Kuo-Ching Yang
;
Ting-Chia Hsu
;
Po-Hsiang Liao…
关键词:
Gate
;
stacking heterostructure
;
SiGe channel
;
Self
;
aligned
;
Ge quantum dot
刊名:Nanoscale Research Letters
出版年:2015
10.
Effect of oxygen pressure on the texture of a magnetite film grown by reactive deposition on a SiO2/Si(001) surface
作者:
V. V. Balashev
;
V. A. Vikulov
;
T. A. Pisarenko…
刊名:Physics of the Solid State
出版年:2015
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