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1. Influence of fixed abrasive configuration on the polishing process of silicon wafers

作者： Congfu Fang ; Zaixing Zhao ; Longyuan Lu…

关键词：Wafer polishing ; Abrasive configuration ; Trajectory ; Uniformity ; Roughness

刊名：The International Journal of Advanced Manufacturing Technology

出版年：2017

2. Effect of chemical additive on fixed abrasive pad self-conditioning in CMP

作者： Jun Li ; Jiandong Huang ; Lei Xia ; Yongwei Zhu…

关键词：Fixed abrasive polishing ; Wear ratio ; Fixed abrasive pad ; Self ; conditioning ; Chemical additive

刊名：The International Journal of Advanced Manufacturing Technology

出版年：2017

3. A new fabrication process of TGV substrate with silicon vertical feedthroughs using double sided glass in silicon reflow process

作者： Wenyin Li ; Dingbang Xiao ; Xuezhong Wu…

刊名：Journal of Materials Science: Materials in Electronics

出版年：2017

4. Silicon wafers with optically specular surfaces formed by chemical polishing

作者： Zhengshan J. Yu ; Brian M. Wheelwright…

刊名：Journal of Materials Science: Materials in Electronics

出版年：2016

5. Surface integrity and removal mechanism of chemical mechanical grinding of silicon wafers using a newly developed wheel

作者： Zhigang Dong ; Shang Gao ; Han Huang…

关键词：Silicon wafer ; Grinding ; Chemical mechanical ; Surface ; Subsurface damage

刊名：The International Journal of Advanced Manufacturing Technology

出版年：2016

6. The influence of abrasive size on high-pressure chemical mechanical polishing of sapphire wafer

作者： Chuljin Park ; Hyoungjae Kim ; Sangjik Lee…

关键词：Chemical mechanical polishing (CMP) ; High ; Pressure ; Abrasive size ; Removal amount ; Friction ; Sapphire wafer

刊名：International Journal of Precision Engineering and Manufacturing-Green Technology

出版年：2015

7. Effect of conditioner load on the polishing pad surface during chemical mechanical planarization process

作者： Cheolmin Shin ; Hongyi Qin ; Seokjun Hong…

关键词：Chemical mechanical planarization ; Diamond conditioner ; Material removal rate ; Pad surface ; Pad topography ; Within ; wafer non ; uniformity

刊名：Journal of Mechanical Science and Technology

出版年：2016

8. Characteristics of the kinetics of periodic structures CMP for a nonlinear pressure dependence of the polishing rate

作者： R. V. Goldstein ; T. M. Makhviladze ; M. E. Sarychev

刊名：Russian Microelectronics

出版年：2016

9. A mixed elastohydrodynamic lubrication model for simulation of chemical mechanical polishing with double-layer structure of polishing pad

作者：Ping Zhou (1)
Zhigang Dong (1)
Renke Kang (1)
Zhuji Jin (1)
Dongming Guo (1)

1. Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education ; Dalian University of Technology ; Dalian ; 116024 ; China

关键词：Chemical mechanical polishing ; Elastohydrodynamic lubrication ; Multi ; layered elastic theory ; Wafer ; Material removal rate

刊名：The International Journal of Advanced Manufacturing Technology

出版年：2015

10. Mechanical model of nanoparticles for material removal in chemical mechanical polishing process

作者： Hao Chen ; Dan Guo ; Guoxin Xie ; Guoshun Pan

刊名：Friction

出版年：2016

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