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Elsevier电子期刊(4)
在“
Elsevier电子期刊
”中,
命中:
4
条,耗时:小于0.01 秒
在所有数据库中总计命中:
4
条
1.
A novel 4H-SiC MESFET with serpentine channel for high power and high frequency applications
作者:
Hujun Jia
;
hjjia@mail.xidian.edu.cn
;
Yehui
Luo
;
Hang Zhang
;
Ding Xing
;
Peimiao Ma
关键词:
4H-SiC MESFET
;
Serpentine channel
;
Drain saturation current
;
Breakdown point shifting
刊名:Superlattices and Microstructures
出版年:2017
2.
A novel 4H-SiC MESFET with double upper gate and recessed p-buffer
作者:
Hujun Jia
;
Peimiao Ma
;
miks1991@163.com" class="auth_mail" title="E-mail the corresponding author
;
Yehui
Luo
;
Zhihui Yang
;
Zhijiao Wang
;
Qiuyuan Wu
;
Mei Hu
关键词:
4H-SiC MESFET
;
Double upper gate
;
Recessed p-buffer
;
Drain current
;
Gate-source capacitance
刊名:Superlattices and Microstructures
出版年:2016
3.
Improved multi-recessed 4H-SiC MESFETs with double-recessed p-buffer layer
作者:
Hujun Jia
;
Hang Zhang
;
zhanghang0039@163.com" class="auth_mail" title="E-mail the corresponding author
;
Yehui
Luo
;
Zhihui Yang
关键词:
4H&ndash
;
SiC MESFET
;
Multi-recessed drift regions (MRD)
;
Double-recessed p-buffer layer (DRB)
;
Drain saturation current
;
DC transconductance
刊名:Materials Science in Semiconductor Processing
出版年:2015
4.
RF characteristics for 4H-SiC MESFET with a clival gate
作者:
Hujun Jia
;
Ding Xing
;
xingding1992@163.com" class="auth_mail" title="E-mail the corresponding author
;
Hang Zhang
;
Yingchun Yuan
;
Peimiao Ma
;
Yehui
Luo
关键词:
4H-SiC MESFET
;
Clival gate structure
;
RF characteristics
刊名:Materials Science in Semiconductor Processing
出版年:2015
1
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