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ACS电子期刊(1)
在“
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”中,
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条,耗时:0.0100198 秒
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1.
Resistance Switching Characteristics Induced by O2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory
作者:
Po
-
Hsun
ChenTing
-
Chang
Chang
;
Kuan-
Chang
ChangTsung-Ming Tsai
;
Chih-Hung Pan
;
Min-Chen Chen
;
Yu-Ting Su
;
Chih-Yang Lin
;
Yi-Ting Tseng
;
Hui-Chun Huang
;
Huaqiang Wu
;
Ning Deng
;
He Qian
;
Simon M. Sze
刊名:ACS Applied Materials & Interfaces
出版年:2017
1
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