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在“
Elsevier电子期刊
”中,
命中:
1,929
条,耗时:0.0229861 秒
在所有数据库中总计命中:
2,152
条
1.
Low frequency noise in
hydrogenated
p-type
amorphous
silicon
thin films
作者:
V.C. Lopes
;
vincent.lopes@unt.edu
;
A.J. Syllaios
;
C.L. Littler
关键词:
Amorphous
silicon
;
1/f noise
;
Low frequency noise
;
Mott variable range hopping
;
Hydrogen dilution
;
Boron dopant
刊名:Journal of Non-Crystalline Solids
出版年:2017
2.
The influence of methane flow rate on microstructure and surface morphology of a-SiC:H thin films prepared by plasma enhanced chemical vapor deposition technique
作者:
Lihua Jiang
a
;
jlihua107@163.com
;
Xinyu Tan
a
;
b
;
husttanxin@mail.tsinghua.edu.cn
;
Ting Xiao
a
;
b
;
Peng Xiang
a
关键词:
Hydrogenated
amorphous
silicon
carbide
;
Thin films
;
Plasma-enhanced chemical vapor deposition
;
sp3 hybridized carbon
;
Surface morphology
刊名:Thin Solid Films
出版年:2017
3.
An investigation of the optical and structural properties of PECVD a-SiH thin films grown on a porous anodic aluminum template
作者:
S. Dhahri
a
;
sami.dhahri.85@gmail.com
;
E. Fazio
b
;
M. Ghrib
a
;
F. Neri
b
;
K. El Khirouni
c
;
H. Ezzaouia
a
关键词:
Amorphous
Si nanoparticles
;
Porous aluminum
;
Hydrogenated
amorphous
silicon
;
PECVD
;
Substrate temperature
刊名:Journal of Alloys and Compounds
出版年:2017
4.
Surface potential investigation on interdigitated back contact solar cells by Scanning Electron Microscopy and Kelvin Probe Force Microscopy: Effect of electrical bias
作者:
Paul Narchi
a
;
b
;
paul.narchi@polytechnique.edu
;
Vladimir Neplokh
c
;
Valerio Piazza
c
;
Twan Bearda
d
;
Fabien Bayle
c
;
Martin Foldyna
b
;
Chiara Toccafondi
b
;
Patricia Prod&rsquo
;
homme
a
;
Maria Tchernycheva
c
;
Pere Roca i Cabarrocas
b
关键词:
AFM
;
Atomic Force Microscopy
;
a-Si
;
H
;
hydrogenated
amorphous
silicon
;
IBC
;
Interdigitated Back Contact Solar Cell
;
ITO
;
Indium Tin Oxide
;
J(V)
;
current density &ndash
;
voltage
;
KPFM
;
Kelvin Probe Force Microscopy
;
SE
;
Secondary Electrons
;
SEM
;
Scanning Electron Microscopy
刊名:Solar Energy Materials and Solar Cells
出版年:2017
5.
The role of
hydrogenated
amorphous
silicon
oxide buffer layer on improving the performance of
hydrogenated
amorphous
silicon
germanium single-junction solar cells
作者:
Jaran Sritharathikhun
;
jaran.sritharathikhun@nectec.or.th
;
Sorapong Inthisang
;
Taweewat Krajangsang
;
Patipan Krudtad
;
Suttinan Jaroensathainchok
;
Aswin Hongsingtong
;
Amornrat Limmanee
;
Kobsak Sriprapha
关键词:
Hydrogenated
amorphous
silicon
oxide layer
;
Buffer layer
;
Amorphous
silicon
germanium single junction solar cell
刊名:Optical Materials
出版年:2016
6.
Improvement of
hydrogenated
amorphous
silicon
germanium thin film solar cells by different p-type contact layer
作者:
Jaehyun Cho
a
;
1
;
Duy Phong Pham
b
;
1
;
Junhee Jung
a
;
Chonghoon Shin
a
;
Jinjoo Park
b
;
Sangho Kim
a
;
Anh Huy Tuan Le
b
;
Hyeongsik Park
b
;
S.M. Iftiquar
b
;
Junsin Yi
a
;
b
;
yi@yurim.skku.ac.kr" class="auth_mail" title="E-mail the corresponding author
关键词:
a-SiGe
;
H thin film solar cells
;
Hydrogenated
microcrystalline
silicon
oxide
;
p-type contact layer
刊名:Materials Science in Semiconductor Processing
出版年:2016
7.
The influence of annealing temperature on the synthesis of
silicon
quantum dots embedded in
hydrogenated
amorphous
Si-rich
silicon
carbide matrix
作者:
Guozhi Wen
a
;
wwenguozhi@163.com" class="auth_mail" title="E-mail the corresponding author
;
Xiangbin Zeng
b
;
Xianghu Li
a
关键词:
Silicon
;
Quantum dots
;
Bonding configuration
;
Temperature
;
PECVD
刊名:Journal of Non-Crystalline Solids
出版年:2016
8.
Bright luminescence in
amorphous
hydrogenated
silicon
-nitride quantum-dot films prepared by a special designed PECVD system
作者:
D.Q. Shi
;
B.C. Hu
;
W. Xu
;
X.N. Li
;
C.Y. Ma
;
Q.Y. Zhang
;
qyzhang@dlut.edu.cn" class="auth_mail" title="E-mail the corresponding author
关键词:
Amorphous
silicon
-nitride
;
Quantum dot
;
Photoluminescence
刊名:Journal of Luminescence
出版年:2016
9.
High Quality
Hydrogenated
Amorphous
Silicon
Thin Films with Enhanced Growth Rates for Surface Passivation in an Al
2
O
3
Based ICP Reactor
作者:
J.W.M. Lim
;
marklim84th@gmail.com" class="auth_mail" title="E-mail the corresponding author
;
C.S. Chan
;
L. Xu
;
T.M. Ong
;
S.Y. Huang
;
D.Y. Wei
;
Y.N. Guo
;
S. Xu
关键词:
Plasma
;
Materials processing
;
OES
;
FTIR
;
SIMS
;
Surface passivation
;
Amorphous
silicon
刊名:Procedia Engineering
出版年:2016
10.
Influence of the Dopant Penetration Depth on the Solar Cell Performance of n-type Interdigitated Back Contact
Silicon
Solar Cells
作者:
Alexander V. Korovin
a
;
b
;
alexander.korovin@lgep.supelec.fr" class="auth_mail" title="E-mail the corresponding author
;
José
;
Alvarez
a
;
Jean-Paul Kleider
a
关键词:
crystalline
silicon
PV
;
hydrogenated
amorphous
silicon
PV
;
back contacts
;
modeling
刊名:Energy Procedia
出版年:2016
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