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在“Elsevier电子期刊”中，命中：3,980条，耗时：0.0499756 秒

在所有数据库中总计命中：7,026条

1.Double sideband suppressed carrier modulation for stable fiber delivery of radio frequency standards

作者：Thomas Nikas^a ; ^{tnikas@di.uoa.gr" class="auth_mail" title="E-mail the corresponding author} ; Adonis Bogris^a ; ^b ; Dimitris Syvridis^a

关键词：Frequency standard ; Radio frequency photonics ; Analog optical signal processing

刊名：Optics Communications

出版年：2017

2.Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part I: Theory and methodology

作者：D. Boudier^a ; ^{dimitri.boudier@ensicaen.fr} ; B. Cretu^b ; E. Simoen^c ; R. Carin^a ; A. Veloso^c ; N. Collaert^c ; A. Thean^c

关键词：Triple-gate ; FinFET ; Low frequency noise ; 1/f noise ; Generation-recombination ; Traps

刊名：Solid-State Electronics

出版年：2017

3.Discontinuity preserving method for noise removal of multi-carrier signals

作者：Sasan Mahmoodi ^{sm3@ecs.soton.ac.uk" class="auth_mail" title="E-mail the corresponding author}

关键词：Anisotropic diffusion ; Noise removal ; Signal discontinuity ; Multi-carrier signals ; Discontinuity preserving

刊名：Signal Processing

出版年：2017

4.Low frequency noise in hydrogenated p-type amorphous silicon thin films

作者：V.C. Lopes ; ^{vincent.lopes@unt.edu} ; A.J. Syllaios ; C.L. Littler

关键词：Amorphous silicon ; 1/f noise ; Low frequency noise ; Mott variable range hopping ; Hydrogen dilution ; Boron dopant

刊名：Journal of Non-Crystalline Solids

出版年：2017

5.Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part II: Measurements and results

作者：D. Boudier^a ; ^{dimitri.boudier@ensicaen.fr} ; B. Cretu^b ; E. Simoen^c ; R. Carin^a ; A. Veloso^c ; N. Collaert^c ; A. Thean^c

关键词：Triple-gate ; FinFET ; Low frequency noise ; 1/f noise ; Generation recombination ; Traps

刊名：Solid-State Electronics

出版年：2017

6.Blind symbol timing synchronization scheme for real-time industrial wireless control network using high-speed preambleless OFDM systems over multipath fading channels

作者：Wenjian Wang^a ; ^b ; ^{Wenjian.Wang@alcatel-sbell.com.cn}Author Vitae ; Ye Tian^aAuthor Vitae ; Chang-Jun Ahn^aAuthor Vitae

关键词：Frequency-selective channels ; Frequency-division multiplexing ; Symbol timing synchronization ; Symbol timing offset

刊名：Digital Signal Processing

出版年：2017

7.Development of a quantitative risk assessment model for ship collisions in fairways

作者：Tian Chai^a ; ^b ; Jinxian Weng^c ; ^{jxweng@shmtu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Xiong De-qi^a

关键词：Ship collision ; Frequency ; Quantitative risk assessment

刊名：Safety Science

出版年：2017

8.In narrative texts punctuation marks obey the same statistics as words

作者：Andrzej Kulig^a ; Jarosław Kwapień^a ; Tomasz Stanisz^a ; Stanisław Drożdż ; ^a ; ^b ; ^{stanislaw.drozdz@ifj.edu.pl" class="auth_mail" title="E-mail the corresponding author}

关键词：Punctuation ; Word-adjacency networks ; Complex networks ; Word-frequency distribution

刊名：Information Sciences

出版年：2017

9.Structural, dielectric and complex impedance properties of T_0.6Co_0.4Fe₂O₄ (T=Ni, Mg) ferrite nanoparticles prepared by sol gel method

作者：Sobhi Hcini^a ; ^b ; Ahmed Selmi^b ; ^{selmiahmed1178@gmail.com} ; Hedi Rahmouni^c ; ^d ; Aref Omri^a ; Mohamed Lamjed Bouazizi^e

关键词：Ferrites ; Sol&ndash ; gel method ; Dielectric properties ; Impedance spectroscopy

刊名：Ceramics International

出版年：2017

10.Effect of Au⁸⁺ irradiation on Ni/n-GaP Schottky diode: Its influence on interface state density and relaxation time

作者：N. Shiwakoti^a ; A. Bobby^a ; K. Asokan^b ; Bobby Antony^a ; ^{bka.ism@gmail.com" class="auth_mail" title="E-mail the corresponding author}

关键词：Gallium phosphide ; Schottky diodes ; Ion irradiation ; Dielectric properties ; Negative capacitance

刊名：Physica B: Physics of Condensed Matter

出版年：2017

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