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内部出版物
SpringerLink电子期刊(5)
Elsevier电子期刊(13)
在“
Elsevier电子期刊
”中,
命中:
13
条,耗时:0.0699654 秒
在所有数据库中总计命中:
18
条
1.
Confinement orientation effects in S/D tunneling
作者:
C. Medina-Bailon
;
cmedba@ugr.es
;
C. Sampedro
;
F. Gá
;
miz
;
A. Godoy
;
L. Donetti
刊名:Solid-State Electronics
出版年:2017
2.
Calibrated
multi
-
subband
Monte
Carlo
modeling of tunnel-FETs in silicon and III-V channel materials
作者:
A. Revelant
;
P. Palestri
;
P. Osgnach
;
L. Selmi
关键词:
Tunnel FET
;
Multi
-
subband
Monte
Carlo
;
Band to band tunneling generation
;
Modeling
刊名:Solid-State Electronics
出版年:2013
3.
Simulation of low Schottky barrier MOSFETs using an improved
Multi
-
subband
Monte
Carlo
model
作者:
Valur Gudmundsson
a
;
valur@kth.se
;
Pierpaolo Palestri
b
;
palestri@uniud.it
;
Per-Erik Hellströ
;
m
a
;
pereh@kth.se
;
Luca Selmi
b
;
luca.selmi@uniud.it
;
Mikael Ö
;
stling
a
;
ostling@kth.se
关键词:
Schottky barrier (SB)
;
Metallic source/drain
;
Monte
Carlo
(MC) method
;
MOSFETs
刊名:Solid-State Electronics
出版年:2013
4.
Multi
-
Subband
Ensemble
Monte
Carlo
simulation of bulk MOSFETs for the 32 nm-node and beyond
作者:
C. Sampedro
a
;
;
csampe@ugr.es
;
F. Gá
;
miz
a
;
A. Godoy
a
;
R. Valí
;
n
b
;
A. Garcí
;
a-Loureiro
b
;
N. Rodrí
;
guez
a
;
I.M. Tienda-Luna
a
;
F. Martinez-Carricondo
a
;
B. Biel
a
关键词:
Multi
-
Subband
;
Ensemble
Monte
Carlo
;
Nanodevices
;
Bulk nMOSFET
;
SGSOI
刊名:Solid-State Electronics
出版年:2011
5.
On the extension of ET-FDSOI roadmap for 22 nm node and beyond
作者:
C. Sampedro
;
F. G谩miz
;
A. Godoy
关键词:
Multi
-
Subband
Ensemble
Monte
Carlo
;
ETSOI
;
FDSOI
;
Ultra Thin BOX
;
BOX engineering
刊名:Solid-State Electronics
出版年:December, 2013
6.
Reaching sub-32 nm nodes: ET-FDSOI and BOX optimization
作者:
C. Sampedro
;
csampe@ugr.es
;
F. Gá
;
miz
;
L. Donetti
;
A. Godoy
关键词:
ET-FDSOI
;
UTB2SOI
;
Multi
-
Subband
;
Monte
Carlo
刊名:Solid-State Electronics
出版年:2012
7.
Multi
-
Subband
Monte
Carlo
study of device orientation effects in ultra-short channel DGSOI
作者:
C. Sampedro
;
F. Gá
;
miz
;
A. Godoy
;
R. Valí
n ;
A. Garcí
;
a-Loureiro
;
F.G. Ruiz
关键词:
Nanotransistor
;
DGSOI
;
Multi
-
Subband
;
Crystallographic orientations
刊名:Solid-State Electronics
出版年:2010
8.
Multi
-
Subband
Monte
Carlo
simulations of
I
作者:
N. Serra
;
P. Palestri
;
G.D.J. Smit
;
L. Selmi
关键词:
FinFET
;
Multi
-
Subband
Monte
Carlo
;
Device simulation
;
Drift-diffusion model
;
Ballistic transport
;
Thickness fluctuations
刊名:Solid-State Electronics
出版年:2009
9.
Monte
-
Carlo
simulation of decananometric nMOSFETs:
Multi
-
subband
vs. 3D-electron gas with quantum corrections
作者:
I. Riolino
;
M. Braccioli
;
L. Lucci
;
P. Palestri
;
D. Esseni
;
C. Fiegna
;
L. Selmi
关键词:
Single-electron transistor
;
SET
;
Random telegraph signal
;
Random number
;
Security
;
Cryptography
;
Poisson process
刊名:Solid-State Electronics
出版年:2007
10.
The
Monte
Carlo
approach to transport modeling in deca-nanometer MOSFETs
作者:
Enrico Sangiorgi
;
Pierpaolo Palestri
;
David Esseni
;
Claudio Fiegna
;
Luca Selmi
刊名:Solid-State Electronics
出版年:2008
1
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