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Wiley电子期刊(18)
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ACS电子期刊(90)
SpringerLink电子期刊(90)
Elsevier电子期刊(519)
在“
Elsevier电子期刊
”中,
命中:
519
条,耗时:0.0109961 秒
在所有数据库中总计命中:
724
条
1.
Optimal process parameters for
phosphorus
spin-on-
doping
of germanium
作者:
Virginia Boldrini
a
;
b
;
Sara Maria Carturan
a
;
b
;
sara.carturan@lnl.infn.it" class="auth_mail" title="E-mail the corresponding author
;
saramaria.carturan@unipd.it" class="auth_mail" title="E-mail the corresponding author
;
Gianluigi Maggioni
a
;
b
;
Enrico Napolitani
a
;
b
;
Daniel Ricardo Napoli
b
;
Riccardo Camattari
c
;
Davide De Salvador
a
;
b
关键词:
Germanium
;
Spin-on-
doping
;
Curing
;
Phosphorus
diffusion
;
Electrical activation
;
Surface corrosion
刊名:Applied Surface Science
出版年:2017
2.
Deep Diffusion of
Phosphorus
in Silicon using Microsecond-pulsed Laser
Doping
作者:
Som Mondal
;
s_mondal@iitb.ac.in
;
Chetan Singh Solanki
chetanss@iitb.ac.in
关键词:
Deep diffusion
;
EBIC
;
Junction depth
;
Laser
doping
刊名:Materials Science in Semiconductor Processing
出版年:2017
3.
Insight into highly efficient simultaneous photocatalytic removal of Cr(VI) and 2,4-diclorophenol under visible light irradiation by
phosphorus
doped porous ultrathin g-C
3
N
4
nanosheets from aqueous media: Performance and reaction mechanism
作者:
Yaocheng Deng
a
;
b
;
Lin Tang
a
;
b
;
tanglin@hnu.edu.cn
;
Guangming Zeng
a
;
b
;
zgming@hnu.edu.cn
;
Zhejing Zhu
a
;
b
;
Ming Yan
a
;
b
;
Yaoyu Zhou
c
;
Jiajia Wang
a
;
b
;
Yani Liu
a
;
b
;
Jingjing Wang
a
;
b
关键词:
g-C3N4
;
Phosphorus
doping
;
Pores and nanosheets
;
Cr(VI) reduction
;
2
;
4-Diclorophenol oxidation
刊名:Applied Catalysis B: Environmental
出版年:2017
4.
Boron and
phosphorus
co-doped carbon counter electrode for efficient hole-conductor-free perovskite solar cell
作者:
Ming Chen
a
;
chenming19830618@126.com
;
Ru-Hua Zha
a
;
Zhong-Yong Yuan
b
;
Qiang-Shan Jing
a
;
c
;
Zhong-Yuan Huang
a
;
Xing-Kun Yang
a
;
Shu-Ming Yang
a
;
Xiang-Hua Zhao
a
;
Dong-Li Xu
a
;
Guo-Dong Zou
a
关键词:
Perovskite solar cell
;
Hole-conductor free
;
Carbon counter electrode
;
Boron and
phosphorus
co-
doping
;
Work function
刊名:Chemical Engineering Journal
出版年:2017
5.
3D modeling of
doping
from the atmosphere in floating zone silicon crystal growth
作者:
A. Sabanskis
;
andrejs.sabanskis@lu.lv
;
K. Surovovs
;
J. Virbulis
关键词:
A1. Computer simulation
;
A1. Convection
;
A1.
Doping
;
A1. Surface processes
;
A2. Floating zone technique
;
B2. Semiconducting silicon
刊名:Journal of Crystal Growth
出版年:2017
6.
Static refractive index engineering of a singlewalled carbon nanotube through co-
doping
: A theoretical study
作者:
Deepa Sharma
a
;
bhargava.dp@gmail.com
;
Neena Jaggi
b
;
neena_jaggi@rediffmail.com
关键词:
Single-walled carbon nanotubes
;
Co-
doping
;
Optical properties
;
Density functional theory
;
CASTEP
;
Material studio
刊名:Optik - International Journal for Light and Electron Optics
出版年:2017
7.
Nitrogen and
phosphorus
co-doped graphene quantum dots as a nano-sensor for highly sensitive and selective imaging detection of nitrite in live cell
作者:
Rongjun Liu
a
;
b
Author Vitae
;
Jingjin Zhao
a
;
jzhao12@163.com
Author Vitae
;
Zirong Huang
a
Author Vitae
;
Liangliang Zhang
a
Author Vitae
;
Mengbing Zou
a
Author Vitae
;
Bingfang Shi
a
Author Vitae
;
Shulin Zhao
a
;
zhaoshulin001@163.com
Author Vitae
关键词:
Doped graphene quantum dots
;
Nitrogen
;
Phosphorus
;
Detection of nitrite
;
Live cell imaging
刊名:Sensors and Actuators B: Chemical
出版年:2017
8.
Three-dimensional
phosphorus
-doped graphene as an efficient metal-free electrocatalyst for electrochemical sensing
作者:
Ye Tian
a
;
tianyehnu@163.com
Author Vitae
;
Zhen Wei
b
Author Vitae
;
Kehui Zhang
c
Author Vitae
;
Shuo Peng
d
Author Vitae
;
Xiao Zhang
d
Author Vitae
;
Wuming Liu
e
Author Vitae
;
Ke Chu
f
;
chukelut@163.com
Author Vitae
关键词:
Three-dimensional graphene
;
Phosphorus
-doped graphene
;
Electrocatalytic activity
;
Electrochemical sensor
刊名:Sensors and Actuators B: Chemical
出版年:2017
9.
H
2
-Ar dilution for improved c-Si quantum dots in P-doped SiN
x
:H thin film matrix
作者:
Jia Liu
a
;
Weijia Zhang
b
;
zwjghx@126.com
;
Shengzhong (Frank) Liu
a
;
c
;
szliu@dicp.ac.cn
;
liusz@snnu.edu.cn
关键词:
c-Si quantum dot
;
SiNx
;
H thin film
;
Phosphorus
-
doping
;
PECVD
刊名:Applied Surface Science
出版年:2017
10.
Behavior of volatile dopants (P, Sb) in Czochralski silicon growth
作者:
M. Porrini
;
R. Scala
;
V.V. Voronkov
关键词:
A2. Czochralski method
;
B2. Semiconducting silicon
;
A1.
Doping
;
A2. Industrial Crystallization
刊名:Journal of Crystal Growth
出版年:2017
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