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CNKI会议论文(30)
CNKI期刊论文0611(6)
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CNKI学位论文(4816)
知网期刊论文(3199)
在“
Elsevier电子期刊
”中,
命中:
3,229
条,耗时:0.0859535 秒
在所有数据库中总计命中:
8,065
条
1.
Electric
field
induced ferroelectric-surface modification for high mobility organic
field
effect
transistors
作者:
A.Z. Ashar
;
K.S. Narayan
;
narayan@jncasr.ac.in
关键词:
Organic
field
effect
transistors
;
Ferroelectric polymers
;
Polymer alignment
;
Atomic force microscopy
刊名:Organic Electronics
出版年:2017
2.
Controlling organization of conjugated polymer films from binary solvent mixtures for high performance organic
field
-
effect
transistors
作者:
Henry Opoku
;
Benjamin Nketia-Yawson
;
Eun Sol Shin
;
Yong-Young Noh
;
yynoh@dongguk.edu
关键词:
Organic
field
-
effect
transistors
;
Conjugated polymer
;
Charge transport
;
Binary solvent blend
;
Off-center spin coating
刊名:Organic Electronics
出版年:2017
3.
Top-gate organic
field
-
effect
transistors
fabricated on paper with high operational stability
作者:
Cheng-Yin Wang
;
Canek Fuentes-Hernandez
;
Wen-Fang Chou
;
Bernard Kippelen
;
kippelen@gatech.edu
关键词:
Organic
field
-
effect
transistors
;
Top-gate geometry
;
Paper
;
Operational stability
;
Flexibility
刊名:Organic Electronics
出版年:2017
4.
Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure
field
-
effect
transistors
modified by surface treatment
作者:
D. Gregu&scaron
;
ová
;
a
;
Dagmar.Gregusova@savba.sk
;
elekgreg@savba.sk
;
F. Gucmann
a
;
R. Kú
;
dela
a
;
M. Miču&scaron
;
í
;
k
b
;
R. Stoklas
a
;
L. Vá
;
lik
a
;
J. Gregu&scaron
;
c
;
M. Blaho
a
;
P. Kordo&scaron
;
d
关键词:
Surface treatment
;
III&ndash
;
V Semiconductors
;
Gallium arsenide
;
Heterostructure
field
effect
transistors
;
Transistor characteristics
;
Trap state density
刊名:Applied Surface Science
出版年:2017
5.
Controlled surface doping for operating stability enhancement in organic
field
-
effect
transistors
作者:
Chen-Huan Wang
;
Xu Gao
;
gaoxu@suda.edu.cn
;
Ya-Nan Zhong
;
Jie Liu
;
Jian-Long Xu
;
Sui-Dong Wang
;
wangsd@suda.edu.cn
关键词:
Organic
field
-
effect
transistors
;
Surface doping
;
Heterojunction
;
Bias stress
effect
刊名:Organic Electronics
出版年:2017
6.
Understanding the dependence of performance on the dielectric-semiconductor interface in pentacene-based organic
field
-
effect
transistors
作者:
Cheng-Fang Liu
a
;
Yan Lin
a
;
Wen-Yong Lai
a
;
b
;
iamwylai@njupt.edu.cn
;
Wei Huang
a
;
b
关键词:
Organic
field
-
effect
transistors
;
Surface modification
;
Pentacene
;
Mobility
刊名:Materials Letters
出版年:2017
7.
Modification of gate dielectric on the performance of copper (II) phthalocyanine based on organic
field
effect
transistors
作者:
Serif Ruzgar
;
Yasemin Caglar
;
Saliha Ilican
;
Mujdat Caglar
;
mcaglar@anadolu.edu.tr
关键词:
CuPc
;
OFET
;
Field
-
effect
mobility
;
Phototransistor
刊名:Optik - International Journal for Light and Electron Optics
出版年:2017
8.
Synthesis, characterization, and
field
-
effect
performance of the halogenated indolone derivatives
作者:
Congyuan Wei
a
;
1
;
Jiabin Zou
b
;
1
;
Rui Zhu
a
;
Jianyao Huang
c
;
Dong Gao
c
;
Liping Wang
b
;
lpwang@mater.ustb.edu.cn" class="auth_mail" title="E-mail the corresponding author
;
Weifeng Zhang
c
;
zhangwf@iccas.ac.cn" class="auth_mail" title="E-mail the corresponding author
;
Yi Liao
a
;
yliao@cnu.edu.cn" class="auth_mail" title="E-mail the corresponding author
;
Gui Yu
c
;
yugui@iccas.ac.cn" class="auth_mail" title="E-mail the corresponding author
关键词:
Donor-acceptor compound
;
Mobility
;
Indole-2-one
;
Organic
field
-
effect
transistors
刊名:Dyes and Pigments
出版年:2017
9.
Study of novel junctionless Ge n-Tunneling
Field
-
Effect
Transistors
with lightly doped drain (LDD) region
作者:
Xiangyu Liu
;
Huiyong Hu
;
18595580989@163.com
;
Bin Wang
;
Meng Wang
;
Genquan Han
;
Shimin Cui
;
Heming Zhang
关键词:
Junctionless Ge n-TFET
;
LDD region
;
GIDL
;
Sloped gate oxide structure
刊名:Superlattices and Microstructures
出版年:2017
10.
Analytical modeling of subthreshold characteristics of ion-implanted symmetric double gate junctionless
field
effect
transistors
作者:
Balraj Singh
balraj.bits@gmail.com
;
Deepti Gola
er.deeptigola@gmail.com
;
Kunal Singh
kunals.rs.ece@itbhu.ac.in
;
Ekta Goel
ekta.goel.ece11@iitbhu.ac.in
;
Sanjay Kumar
sanjay.kumar.ece11@iitbhu.ac.in
;
Satyabrata Jit
;
sjit.ece@iitbhu.ac.in
关键词:
Junctionless FET
;
Double-gate
;
Gaussian-like doping
;
Short channel
effect
s
;
Subthreshold current
;
Subthreshold swing
刊名:Materials Science in Semiconductor Processing
出版年:2017
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