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SpringerLink电子期刊(207)
在“
SpringerLink电子期刊
”中,
命中:
207
条,耗时:小于0.01 秒
在所有数据库中总计命中:
207
条
1.
Double aperture double-gate vertical high-electron-mobility transistor
作者:
Ball Mukund Mani Tripathi
;
Shyama Prasad Das
关键词:
Single aperture single
;
gate vertical
HEMT
s (SASG
;
V
HEMT
)
;
Double aperture double
;
gate vertical
HEMT
s (DADG
;
V
HEMT
s)
;
Two dimensional electron gases (2DEG)
刊名:Journal of Computational Electronics
出版年:2017
2.
Characterization of AlGaN/GaN and AlGaN/AlN/GaN
HEMT
s in terms of mobility and subthreshold slope
作者:
Santashraya Prasad
;
Amit Krishna Dwivedi…
关键词:
AlGaN/GaN
;
High
;
electron mobility transistor (
HEMT
)
;
Spacer layer
;
Mobility
;
Subthreshold slope
刊名:Journal of Computational Electronics
出版年:2016
3.
Evaluation of energy dissipation involving adhesion hysteresis in spherical contact between a glass lens and a PDMS block
作者:
Dooyoung Baek
;
Pasomphone
Hemt
havy
;
Shigeki Saito…
关键词:
Adhesion by physical adsorption
;
Adhesion hysteresis
;
Energy dissipation
刊名:Applied Adhesion Science
出版年:2017
4.
Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode
HEMT
s on 200 mm Si Substrates
作者:
Jie Su
;
Niels Posthuma
;
Dirk Wellekens…
关键词:
AlGaN
HEMT
;
MOCVD
;
enhancement
;
mode
;
TMAl pre
;
dosing
刊名:Journal of Electronic Materials
出版年:2016
5.
A high-efficiency narrow-band class-F power amplifier integrated with a microstrip suppressing cell
作者:
Mohsen Hayati
;
Farzin Shama
关键词:
Class
F ;
Microstrip
;
Power added efficiency
;
Power amplifier
;
Suppressing cell
刊名:Analog Integrated Circuits and Signal Processing
出版年:2017
6.
Electron Mobilities and Effective Masses in InGaAs/InAlAs
HEMT
Structures with High In Content
作者:
N. A. Yuzeeva
;
A. V. Sorokoumova
;
R. A. Lunin…
关键词:
HEMT
structures
;
InGaAs/InAlAs
;
Effective mass
;
Mobility
刊名:Journal of Low Temperature Physics
出版年:2016
7.
Modelling of capacitance and threshold voltage for ultrathin normally-off AlGaN
/
GaN MOS
HEMT
作者:
R SWAIN
;
K JENA
;
T R LENKA
关键词:
Two
;
dimensional electron gas
;
density of state
;
high electron mobility transistor
;
metal oxide semiconductor high electron mobility transistor
;
normally
;
off
;
quantum capacitance.
刊名:Pramana
出版年:2017
8.
Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment
作者:
E. V. Erofeev
;
I. V. Fedin
;
I. V. Kutkov
;
Yu. N. Yuryev
刊名:Semiconductors
出版年:2017
9.
A physics-based potential and electric field model of a nanoscale rectangular high-K gate dielectric
HEMT
作者:
B DAS
;
R GOSWAMI
;
B BHOWMICK
关键词:
AlGaN /GaN
;
HEMT
;
surface potential
;
channel potential
;
electric field.
刊名:Pramana
出版年:2016
10.
Optimal design of the multiple-apertures-GaN-based vertical
HEMT
s with \(\hbox {SiO}_{2}\)
作者:
Niraj Man Shrestha
;
Yiming Li
;
Edward Yi Chang
关键词:
Vertical high electron mobility transistor
;
Silicon dioxide current blocking layer
;
Multiple apertures
;
Electrical characteristic
;
Breakdown voltage
;
Simulation
刊名:Journal of Computational Electronics
出版年:2016
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