设为首页
收藏本站
网站地图
|
English
|
公务邮箱
About the library
Background
History
Leadership
Organization
Readers' Guide
Opening Hours
Collections
Help Via Email
Publications
Electronic Information Resources
常用资源
电子图书
期刊论文
学位会议
外文资源
特色专题
内部出版物
CNKI会议论文(7)
CNKI学位论文(869)
知网期刊论文(571)
在“
SpringerLink电子期刊
”中,
命中:
220
条,耗时:小于0.01 秒
在所有数据库中总计命中:
1,447
条
1.
A Study of the Parasitic Properties of the
Schottky
Barrier
Diode
作者:
Tianhao Ren
;
Yong Zhang
;
Shuang Liu…
关键词:
Modeling technology
;
Three
;
configuration parameter extraction method
;
Parasitic properties
;
Schottky
barrier
diode
刊名:Journal of Infrared, Millimeter, and Terahertz Waves
出版年:2017
2.
Electrical and Dielectric Properties of a
n
-Si
Schottky
Barrier
Diode
with Bismuth Titanate Interlayer: Effect of Temperature
作者:
M. Yıldırım
;
C. Şahin
;
Ş. Altındal
;
P. Durmuş
关键词:
MFS
Schottky
barrier
diode
s
;
bismuth titanate
;
electrical and dielectric properties
;
temperature effect
刊名:Journal of Electronic Materials
出版年:2017
3.
Fabrication and characterization of hydrothermally grown MgZnO nanorod films for
Schottky
diode
applications
作者:
Shaivalini Singh
;
G. R. Dillip
;
Sumit Vyas
;
Md. Roqibul Hasan…
刊名:Microsystem Technologies
出版年:2017
4.
Fabrication of a 1.7-kV
Schottky
barrier
diode
with improved forward current-voltage characteristics
作者:
In Ho Kang
;
Moon Kyong Na
;
Ogyun Seok…
关键词:
4H
;
SiC
;
Schottky
barrier
diode
;
Thermal annealing
;
Forward I
;
V improvement
刊名:Journal of the Korean Physical Society
出版年:2016
5.
Effect of oxygen plasma treatment on the electrical characteristics of Pt/n-type Si
Schottky
diode
s
作者:
V. Janardhanam
;
I. Jyothi
;
Shim-Hoon Yuk…
关键词:
Oxygen plasma
n ;
type Si
;
Schottky
barrier
;
Series resistance
;
Interface states
刊名:Journal of the Korean Physical Society
出版年:2016
6.
Analysis of inhomogeneous device parameters using current–voltage characteristics of identically prepared lateral
Schottky
structures
作者:
N. Tuğluoğlu
;
H. Koralay
;
K. B. Akgül
;
Ş. Çavdar
关键词:
Schottky
structure
;
Current–voltage
;
Barrier
height
;
Ideality factor
;
Series resistance
;
Interface state density
;
73.40.Sx
;
85.30.Hi
;
85.30.Kk
刊名:Indian Journal of Physics
出版年:2016
7.
Barrier
modification of Au/n-GaAs
Schottky
structure by organic interlayer
作者:
A. Bobby
;
N. Shiwakoti
;
P. S. Gupta
;
B. K. Antony
关键词:
Au/n
;
GaAs
;
Schottky
contacts
;
Interface modification
;
Organic interlayer
;
73.30. + y
;
73.40.
c ;
73.40.Qv
;
73.50.Gr
;
68.08.
p
刊名:Indian Journal of Physics
出版年:2016
8.
Junction characteristics of ITO/PANI-ZnS/Ag and ITO/PANI-CdS/Ag
Schottky
diode
s: a comparative study
作者:
S. K. Dey
;
S. Baglari
;
D. Sarkar
关键词:
Polyaniline
;
Zinc sulphide
;
Cadmium sulphide
;
Nanocomposite
;
Schottky
diode
;
73.61. Ph
;
73.61. Ga
;
78.67. Sc
刊名:Indian Journal of Physics
出版年:2016
9.
The Study of 0.34?THz Monolithically Integrated Fourth Subharmonic Mixer Using Planar
Schottky
Barrier
Diode
作者:
Xiaodong Tong
;
Qian Li
;
Ning An
;
Wenjie Wang…
关键词:
THz technology
;
GaAs planar
Schottky
barrier
diode
;
Fourth subharmonic mixer
;
Conversion loss
刊名:International Journal of Infrared and Millimeter Waves
出版年:2015
10.
Transport mechanisms and interface properties of W/p-InP
Schottky
diode
at room temperature
作者:
D. Sri Silpa
;
P. Sreehith
;
V. Rajagopal Reddy
;
V. Janardhanam
关键词:p ;
InP
;
Schottky
contacts
;
Electrical properties
;
Current conduction mechanisms
;
Interface state density
刊名:Indian Journal of Physics
出版年:2016
1
2
3
4
5
6
7
8
9
按检索点细分(220)
题名(43)
关键词(27)
文摘(194)
按出版年细分(220)
2017年(3)
2016年(18)
2015年(41)
2014年(26)
2013年(26)
2012年(16)
2011年(5)
2010年(2)
2009年(7)
2008年(7)
2007年(14)
2006年(7)
2005年(9)
2004年(5)
2003年(5)
2002年(8)
2001年(7)
2000年(4)
2000年及以前(10)
NGLC 2004-2010.National Geological Library of China All Rights Reserved.
Add:29 Xueyuan Rd,Haidian District,Beijing,PRC. Mail Add: 8324 mailbox 100083
For exchange or info please contact us via
email
.