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NATURE电子期刊(16)
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在“
NATURE电子期刊
”中,
命中:
16
条,耗时:小于0.01 秒
在所有数据库中总计命中:
2,972
条
1.
The effect of
doping
Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on
Ge
-Se
作者:
Sang-Yeol Shin
;
J. M. Choi
;
Juhee Seo
;
Hyung-Woo Ahn
;
Yong Gyu Choi
;
Byung-ki Cheong
;
Suyoun Lee
关键词:
Electronic devices
;
Electronic properties and materials
刊名:Scientific Reports
出版年:2014
2.
Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-
doping
levels in the well layers
作者:
Chenguang He
;
Zhixin Qin
;
Fujun Xu
;
Mengjun Hou
;
Shan Zhang
;
Lisheng Zhang
;
Xinqiang Wang
;
Weikun
Ge
;
Bo Shen
刊名:Scientific Reports
出版年:2015
3.
Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement
作者:
L. Guo
;
X. Q. Wang
;
X. T. Zheng
;
X. L. Yang
;
F. J. Xu
;
N. Tang
;
L. W. Lu
;
W. K.
Ge
;
B. Shen
;
L. H. Dmowski
;
T. Suski
关键词:
Electrical and electronic engineering
;
Electronic devices
刊名:Scientific Reports
出版年:2014
4.
The effect of La2O3 in Tm3+-doped
ge
rmanate-tellurite glasses for ~2 μm emission
作者:
Ya-Pei Peng
;
Xinqiang Yuan
;
Junjie Zhang
;
Long Zhang
关键词:
Glasses
;
Optical materials and structures
刊名:Scientific Reports
出版年:2014
5.
Graphene, a material for high temperature devices – intrinsic carrier density, carrier drift velocity, and lattice energy
作者:
Yan Yin
;
Zengguang Cheng
;
Li Wang
;
Kuijuan Jin
;
Wenzhong Wang
关键词:
Raman spectroscopy
;
Electronic properties and devices
;
Optical properties and devices
刊名:Scientific Reports
出版年:2014
6.
Mana
ge
able N-doped Graphene for High Performance Oxy
ge
n Reduction Reaction
作者:
Yuewei Zhang
;
Jun
Ge
;
Lu Wang
;
Donghong Wang
;
Feng Ding
;
Xiaoming Tao
;
Wei Chen
关键词:
Electrocatalysis
;
Two-dimensional materials
刊名:Scientific Reports
出版年:2013
7.
Ferromagnetic quantum critical point induced by dimer-breaking in SrCo2(
Ge
1−xPx)2
作者:
Shuang Jia
;
Pawina Jiramongkolchai
;
M. R. Suchomel
;
B. H. Toby
;
J. G. Checkelsky
;
N. P. Ong
;
R. J. Cava
刊名:Nature Physics
出版年:2011
8.
Microscopic origin of the fast crystallization ability of
Ge
–Sb–Te phase-chan
ge
memory materials
作者:
J. He
ge
dü
s ;
S. R. Elliott
刊名:Nature Materials
出版年:2008
9.
Direct measurement of dopant distribution in an individual vapour–liquid–solid nanowire
作者:
Daniel E. Perea
;
Eric R. Hemesath
;
Edwin J. Schwalbach
;
Jessica L. Lensch-Falk
;
Peter W. Voorhees
;
Lincoln J. Lauhon
刊名:Nature Nanotechnology
出版年:2009
10.
Donor deactivation in silicon nanostructures
作者:
Mikael T. Bjö
;
rk
;
Heinz Schmid
;
Joachim Knoch
;
Heike Riel
;
Walter Riess
刊名:Nature Nanotechnology
出版年:2009
1
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