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High-Speed Planar GaAs Nanowire Arrays with fmax > 75 GHz by Wafer-Scale Bottom-up Growth
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作者:
Xin Miao
;
Kelson Chabak
;
Chen Zhang
;
Parsian K. Mohseni
;
Dennis Walker
;
Jr.
;
Xiuling Li
刊名:Nano Letters
出版年:2015
出版时间:May 13, 2015
年:2015
卷:15
期:5
页码:2780-2786
全文大小:409K
ISSN:1530-6992
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Table of Contents
High-Speed Planar GaAs Nanowire Arrays with
f
max
> 75 GHz by Wafer-Scale Bottom-up Growth
Xin Miao
鈥?/sup>
,
Kelson Chabak
鈥?/sup>
鈥?/sup>
,
Chen Zhang
鈥?/sup>
,
Parsian K. Mohseni
鈥?/sup>
,
Dennis Walker
,
Jr.
鈥?/sup>
, and
Xiuling Li
*
鈥?/sup>
鈥?/sup> Microand Nanotechnology Laboratory,
Universityof Illinois Urbana鈭扖hampaign
, 208 N. Wright Street, Urbana, Illinois 61801,
UnitedStates
鈥?/sup>
AirForce Research Laboratory, Sensors Directorate
, 2241 Avionics Circle, Wright-PattersonAir Force Base, Ohio 45433,
United States
Nano Lett.
,
2015
,
15
(5), pp 2780–2786
DOI:
10.1021/nl503596jPublication Date (Web): December 10, 2014Copyright 漏 2014 American Chemical Society*E-mail:
edu">xiuling@illinois.
edu
.
Top of Page
Abstract
References
Abstract
Wafer-scale defect-free planar III鈥揤 nanowire (NW) arrays with 鈭?00% yield and precisely defined positions are realized via a patterned vapor鈥搇iquid鈥搒olid (VLS) growth method. Long and uniform planar GaAs NWs were assembled in perfectly parallel arrays to form double-channel T-gated NW array-based high electron mobility transistors (HEMTs) with DC and RF performance surpassing those for all field-effect transistors (FETs) with VLS NWs, carbon nanotubes (CNTs), or graphene channels in-plane with the substrate. For a planar GaAs NW array-based HEMT with 150 nm gate length and 2 V drain bias, the on/off ratio (
I
ON
/
I
OFF
), cutoff frequency (
f
T
), and maximum oscillation frequency (
f
max
) are 10
4
, 33, and 75 GHz, respectively. By characterizing more than 100 devices on a 1.5 脳 1.5 cm
2
chip, we prove chip-level electrical uniformity of the planar NW array-based HEMTs and verify the feasibility of using this bottom-up planar NW technology for post-Si large-scale nanoelectronics.
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